No. |
Part Name |
Description |
Manufacturer |
121 |
FMB2227A |
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package |
Powertip Technology |
122 |
FPT-64P-M09 |
LOW PROFILE QUAD FLAT PACKAGE 64 PIN PLASTIC |
Fujitsu Microelectronics |
123 |
GM71C17400CLT-6 |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM |
Hynix Semiconductor |
124 |
GM71C17400CT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
125 |
GM71C17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
126 |
GM71C17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
127 |
GM71C17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
128 |
GM71C17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
129 |
GM71C18163AT-6 |
1,048,576 words x 16 bit DRAM, 60ns |
LG Semiconductor |
130 |
GM71C18163CT-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns |
Hynix Semiconductor |
131 |
GM71CS17400CLT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns, low power |
Hynix Semiconductor |
132 |
GM71CS17400CT-6 |
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns |
Hynix Semiconductor |
133 |
GM71CS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
134 |
GM71CS17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns |
Hynix Semiconductor |
135 |
GM71CS17800CLT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns, low power |
Hynix Semiconductor |
136 |
GM71CS17800CT-6 |
CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns |
Hynix Semiconductor |
137 |
GM71CS18163ALT-6 |
1,048,576 words x 16 bit DRAM, 60ns, low power |
LG Semiconductor |
138 |
GM71CS18163CLT-6 |
1,048,576 words x 16 bit CMOS DRAM, 60ns, low power |
Hynix Semiconductor |
139 |
GM71V17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
140 |
GM71V17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
141 |
GM71VS17403CLT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns, low power |
Hynix Semiconductor |
142 |
GM71VS17403CT-6 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns |
Hynix Semiconductor |
143 |
GS81032AT-6 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
144 |
GS81032AT-6I |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
145 |
GS8160F18T-6 |
6ns 1M x 18 18MB synchronous burst SRAM |
GSI Technology |
146 |
GS8160F18T-6.5 |
6.5ns 1M x 18 18MB synchronous burst SRAM |
GSI Technology |
147 |
GS8160F18T-6.5I |
6.5ns 1M x 18 18MB synchronous burst SRAM |
GSI Technology |
148 |
GS8160F18T-6I |
6ns 1M x 18 18MB synchronous burst SRAM |
GSI Technology |
149 |
GS8160F32T-6 |
6ns 512K x 32 18MB synchronous burst SRAM |
GSI Technology |
150 |
GS8160F32T-6.5 |
6.5ns 512K x 32 18MB synchronous burst SRAM |
GSI Technology |
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