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Datasheets for TD12

Datasheets found :: 190
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No. Part Name Description Manufacturer
121 MBM29DL324TD12PBT CMOS 32M (4M x 8/2M x16) bit dual operation Fujitsu Microelectronics
122 MBM29DL324TD12PFTN CMOS 32M (4M x 8/2M x16) bit dual operation Fujitsu Microelectronics
123 MBM29DL324TD12PFTR CMOS 32M (4M x 8/2M x16) bit dual operation Fujitsu Microelectronics
124 MTD12N06EZL OBSOLETE - REPLACEMENT P/N# - NONE ON Semiconductor
125 MTD12N06EZL-D TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
126 NTD12N10 Power MOSFET 12 Amps, 100 Volts ON Semiconductor
127 NTD12N10-001 Power MOSFET 12 Amps, 100 Volts ON Semiconductor
128 NTD12N10-D Power MOSFET 12 Amps, 100 Volts N-Channel Enhancement-Mode DPAK ON Semiconductor
129 NTD12N10T4 Power MOSFET 12 Amps, 100 Volts ON Semiconductor
130 NTD12N10T4G Power MOSFET 12 Amps, 100 Volts ON Semiconductor
131 PDTD123E NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Philips
132 PDTD123EK NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Philips
133 PDTD123EQA 50 V, 500 mA NPN resistor-equipped transistors Nexperia
134 PDTD123ES NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Philips
135 PDTD123ET NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Nexperia
136 PDTD123ET NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm NXP Semiconductors
137 PDTD123ET NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW Philips
138 PDTD123EU 500 mA, 50 V NPN resistor-equipped transistors Nexperia
139 PDTD123EU 500 mA, 50 V NPN resistor-equipped transistors NXP Semiconductors
140 PDTD123TT NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open Nexperia
141 PDTD123TT NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open NXP Semiconductors
142 PDTD123YQA 50 V, 500 mA NPN resistor-equipped transistors Nexperia
143 PDTD123YT NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm Nexperia
144 PDTD123YT NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm NXP Semiconductors
145 PDTD123YU 500 mA, 50 V NPN resistor-equipped transistors Nexperia
146 PDTD123YU 500 mA, 50 V NPN resistor-equipped transistors NXP Semiconductors
147 STD120N4F6 N-channel 40 V, 3.5 mOhm, 80 A, DPAK, STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
148 STD120N4LF6 N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET ST Microelectronics
149 STD1224N N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics Corp.
150 STD123ASF NPN Silicon Transistor AUK Corp


Datasheets found :: 190
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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