No. |
Part Name |
Description |
Manufacturer |
121 |
MBM29DL324TD12PBT |
CMOS 32M (4M x 8/2M x16) bit dual operation |
Fujitsu Microelectronics |
122 |
MBM29DL324TD12PFTN |
CMOS 32M (4M x 8/2M x16) bit dual operation |
Fujitsu Microelectronics |
123 |
MBM29DL324TD12PFTR |
CMOS 32M (4M x 8/2M x16) bit dual operation |
Fujitsu Microelectronics |
124 |
MTD12N06EZL |
OBSOLETE - REPLACEMENT P/N# - NONE |
ON Semiconductor |
125 |
MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
126 |
NTD12N10 |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
127 |
NTD12N10-001 |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
128 |
NTD12N10-D |
Power MOSFET 12 Amps, 100 Volts N-Channel Enhancement-Mode DPAK |
ON Semiconductor |
129 |
NTD12N10T4 |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
130 |
NTD12N10T4G |
Power MOSFET 12 Amps, 100 Volts |
ON Semiconductor |
131 |
PDTD123E |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
132 |
PDTD123EK |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
133 |
PDTD123EQA |
50 V, 500 mA NPN resistor-equipped transistors |
Nexperia |
134 |
PDTD123ES |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
135 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
Nexperia |
136 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm |
NXP Semiconductors |
137 |
PDTD123ET |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW |
Philips |
138 |
PDTD123EU |
500 mA, 50 V NPN resistor-equipped transistors |
Nexperia |
139 |
PDTD123EU |
500 mA, 50 V NPN resistor-equipped transistors |
NXP Semiconductors |
140 |
PDTD123TT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open |
Nexperia |
141 |
PDTD123TT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open |
NXP Semiconductors |
142 |
PDTD123YQA |
50 V, 500 mA NPN resistor-equipped transistors |
Nexperia |
143 |
PDTD123YT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
Nexperia |
144 |
PDTD123YT |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm |
NXP Semiconductors |
145 |
PDTD123YU |
500 mA, 50 V NPN resistor-equipped transistors |
Nexperia |
146 |
PDTD123YU |
500 mA, 50 V NPN resistor-equipped transistors |
NXP Semiconductors |
147 |
STD120N4F6 |
N-channel 40 V, 3.5 mOhm, 80 A, DPAK, STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
148 |
STD120N4LF6 |
N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
149 |
STD1224N |
N-Channel Enhancement Mode Field Effect Transistor |
SamHop Microelectronics Corp. |
150 |
STD123ASF |
NPN Silicon Transistor |
AUK Corp |
| | | |