| Home | All manufacturers | By Category |

Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA

LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for TEMPERATURE DE

Datasheets found :: 127

Page: | 1 | 2 | 3 | 4 | 5 |

No.	Part Name	Description	Manufacturer
121	W6NRE0X-0000	Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition	CREE POWER
122	W6NXD0K-0000	Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition	CREE POWER
123	W6NXD0KLSR-0000	Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition	CREE POWER
124	W6NXD3J-0000	Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition	CREE POWER
125	W6NXD3K-0000	Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition	CREE POWER
126	W6NXD3L-0000	Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition	CREE POWER
127	W6PXD3O-0000	Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition	CREE POWER

Datasheets found :: 127

Page: | 1 | 2 | 3 | 4 | 5 |

© 2024 - www Datasheet Catalog com