| No. |
Part Name |
Description |
Manufacturer |
| 121 |
STGFW30NC60V |
40 A, 600 V, very fast IGBT |
ST Microelectronics |
| 122 |
STGFW30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
| 123 |
STGFW30V60F |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed |
ST Microelectronics |
| 124 |
STGFW35HF60W |
18 A, 600 V Ultrafast IGBT |
ST Microelectronics |
| 125 |
STGFW40H65FB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed |
ST Microelectronics |
| 126 |
STGFW40V60DF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed |
ST Microelectronics |
| 127 |
STGFW40V60F |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed |
ST Microelectronics |
| 128 |
STGFW45HF60W |
23 A, 600 V Ultrafast IGBT |
ST Microelectronics |
| 129 |
STGFW80V60F |
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed |
ST Microelectronics |
| 130 |
TGF1350 |
Discrete MESFET |
TriQuint Semiconductor |
| 131 |
TGF1350-SCC |
Discrete MESFET |
TriQuint Semiconductor |
| 132 |
TGF149-100A |
V(drm): 100V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 133 |
TGF149-200A |
V(drm): 200V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 134 |
TGF149-300A |
V(drm): 300V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 135 |
TGF149-400A |
V(drm): 400V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 136 |
TGF149-500A |
V(drm): 500V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 137 |
TGF149-600A |
V(drm): 600V; fast switching thyristor. For high frequency power switching applications |
SGS Thomson Microelectronics |
| 138 |
TGF2018 |
DC - 20 GHz, 180 um Discrete GaAs pHEMT Die |
Qorvo |
| 139 |
TGF2021-01 |
DC-12 GHz Discrete Power pHEMT |
TriQuint Semiconductor |
| 140 |
TGF2023-2-01 |
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT |
Qorvo |
| 141 |
TGF2023-2-02 |
DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT |
Qorvo |
| 142 |
TGF2023-2-05 |
DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT |
Qorvo |
| 143 |
TGF2023-2-10 |
DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT |
Qorvo |
| 144 |
TGF2023-2-20 |
DC - 14 GHz, 100 Watt Discrete Power GaN on SiC HEMT |
Qorvo |
| 145 |
TGF2025 |
DC - 20 GHz 250 um Discrete GaAs pHEMT |
Qorvo |
| 146 |
TGF2040 |
DC - 20 GHz 400 um Discrete GaAs pHEMT |
Qorvo |
| 147 |
TGF2060 |
DC - 20 GHz 600 um Discrete GaAs pHEMT |
Qorvo |
| 148 |
TGF2080 |
DC - 20 GHz 800 um Discrete GaAs pHEMT |
Qorvo |
| 149 |
TGF2120 |
DC - 20 GHz 1200 um Discrete GaAs pHEMT |
Qorvo |
| 150 |
TGF2160 |
DC - 20 GHz 1600 um Discrete GaAs pHEMT |
Qorvo |
| | | |
