| No. |
Part Name |
Description |
Manufacturer |
| 121 |
BUK6D120-40E |
40 V, N-channel Trench MOSFET |
Nexperia |
| 122 |
BUK6D120-60P |
60 V, P-channel Trench MOSFET |
Nexperia |
| 123 |
BUK6D125-60E |
60 V, N-channel Trench MOSFET |
Nexperia |
| 124 |
BUK6D210-60E |
60 V, N-channel Trench MOSFET |
Nexperia |
| 125 |
BUK6D22-30E |
30 V, N-channel Trench MOSFET |
Nexperia |
| 126 |
BUK6D23-40E |
40 V, N-channel Trench MOSFET |
Nexperia |
| 127 |
BUK6D230-80E |
80 V, N-channel Trench MOSFET |
Nexperia |
| 128 |
BUK6D38-30E |
30 V, N-channel Trench MOSFET |
Nexperia |
| 129 |
BUK6D385-100E |
100 V, N-channel Trench MOSFET |
Nexperia |
| 130 |
BUK6D43-40P |
40 V, P-channel Trench MOSFET |
Nexperia |
| 131 |
BUK6D43-60E |
60 V, N-channel Trench MOSFET |
Nexperia |
| 132 |
BUK6D56-60E |
60 V, N-channel Trench MOSFET |
Nexperia |
| 133 |
BUK6D72-30E |
30 V, N-channel Trench MOSFET |
Nexperia |
| 134 |
BUK6D77-60E |
60 V, N-channel Trench MOSFET |
Nexperia |
| 135 |
BUK6D81-80E |
80 V, N-channel Trench MOSFET |
Nexperia |
| 136 |
BUK7107-40AIC |
V(ds): 40V; V(dgs): 40V; trench PLUS standard level FET. For variable valve timing for engines, electrical power assisted steering |
Philips |
| 137 |
BUK7907-40AIC |
V(ds): 40V; V(dgs): 40V; trench PLUS standard level FET. For variable valve timing for engines, electrical power assisted steering |
Philips |
| 138 |
BUK7D25-40E |
40 V, N-channel Trench MOSFET |
Nexperia |
| 139 |
BUK9D23-40E |
40 V, N-channel Trench MOSFET |
Nexperia |
| 140 |
CM100DU-12F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 141 |
CM100DU-24F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 142 |
CM100TJ-12F |
Trench Gate Design 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 143 |
CM100TJ-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 144 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 145 |
CM100TU-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 146 |
CM150DU-12F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 147 |
CM150DU-24F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 148 |
CM150TJ-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 149 |
CM150TU-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 150 |
CM200DU-12F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
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