No. |
Part Name |
Description |
Manufacturer |
121 |
NE41137 |
N-Channel GaAs Dual Gate MES FET |
California Eastern Laboratories |
122 |
NTE222 |
Field Effect Transistor Dual Gate N-Channel MOSFET |
NTE Electronics |
123 |
Q62702-F1391 |
GaAs MMIC (Biased Dual Gate GaAs FET) |
Siemens |
124 |
SD303CHP |
20 V, N-channel enhancement-mode dual gate D-MOS FET |
Topaz Semiconductor |
125 |
SD303DC |
20 V, N-channel enhancement-mode dual gate D-MOS FET |
Topaz Semiconductor |
126 |
SD303R |
20 V, N-channel enhancement-mode dual gate D-MOS FET |
Topaz Semiconductor |
127 |
SD304CHP |
+25 V, N-channel enhancement-mode dual gate D-MOS FET |
Topaz Semiconductor |
128 |
SD304DE |
+25 V, N-channel enhancement-mode dual gate D-MOS FET |
Topaz Semiconductor |
129 |
SD304R |
+25 V, N-channel enhancement-mode dual gate D-MOS FET |
Topaz Semiconductor |
130 |
SD306CHP |
+20 V, N-channel enhancement-mode dual gate D-MOS FET |
Topaz Semiconductor |
131 |
SD306DE |
+20 V, N-channel enhancement-mode dual gate D-MOS FET |
Topaz Semiconductor |
132 |
SD306R |
+20 V, N-channel enhancement-mode dual gate D-MOS FET |
Topaz Semiconductor |
133 |
SGM2014 |
GaAs N-channel Dual Gate MES FET |
SONY |
134 |
SGM2014AM |
GaAs N-channel Dual Gate MES FET |
SONY |
135 |
SGM2014AN |
GaAs N-channel Dual Gate MES FET |
SONY |
136 |
SGM2014M |
GaAs N-channel Dual Gate MES FET |
SONY |
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