| No. |
Part Name |
Description |
Manufacturer |
| 121 |
IRFW840BTM |
500V N-Channel B-FET / Substitute of IRFW840A |
Fairchild Semiconductor |
| 122 |
IRLR110ATF |
100V N-Channel Logic Level A-FET / Substitute of IRLR110 |
Fairchild Semiconductor |
| 123 |
IRLR110ATM |
100V N-Channel Logic Level A-FET / Substitute of IRLR110 |
Fairchild Semiconductor |
| 124 |
IRLR120ATF |
100V N-Channel Logic Level A-FET / Substitute of IRLR120 |
Fairchild Semiconductor |
| 125 |
IRLR120ATM |
100V N-Channel Logic Level A-FET / Substitute of IRLR120 |
Fairchild Semiconductor |
| 126 |
IRLR210ATF |
200V N-Channel Logic Level A-FET / Substitute of IRLR210 |
Fairchild Semiconductor |
| 127 |
IRLR210ATM |
200V N-Channel Logic Level A-FET / Substitute of IRLR210 |
Fairchild Semiconductor |
| 128 |
IRLR220ATF |
200V N-Channel Logic Level A-FET / Substitute of IRLR220 |
Fairchild Semiconductor |
| 129 |
IRLR220ATM |
200V N-Channel Logic Level A-FET / Substitute of IRLR220 |
Fairchild Semiconductor |
| 130 |
IRLU110ATU |
100V N-Channel Logic Level A-FET / Substitute of IRLU110 |
Fairchild Semiconductor |
| 131 |
L-53CGCK |
The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode |
Kingbright Electronic |
| 132 |
L76761CSYC |
The Super Bright Yellow source color devices are made with DH InGaAIP on GaAs substrate Light Emitting Diode. |
Kingbright Electronic |
| 133 |
MC797P |
Dual full substractors |
Motorola |
| 134 |
MC897 |
Dual Full Substractors |
Motorola |
| 135 |
MC897P |
Dual full substractors |
Motorola |
| 136 |
MC997 |
Dual Full Substractors |
Motorola |
| 137 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 138 |
Microwave Substrates |
Microwave substrates are designed to meet the demands of devices in the Ultra High Frequency (UHF) to microwave frequency range, can be metallized for thick film applications |
Skyworks Solutions |
| 139 |
MJ2267 |
Silicon PNP power transistor, these devices can be directly substituted for germanium types |
Motorola |
| 140 |
MJ2268 |
Silicon PNP power transistor, these devices can be directly substituted for germanium types |
Motorola |
| 141 |
SFR9014TF |
60V P-Channel A-FET / Substitute of IRFR9014 |
Fairchild Semiconductor |
| 142 |
SFR9014TM |
60V P-Channel A-FET / Substitute of IRFR9014 |
Fairchild Semiconductor |
| 143 |
SFR9024TF |
60V P-Channel A-FET / Substitute of IRFR9024 |
Fairchild Semiconductor |
| 144 |
SFR9024TM |
60V P-Channel A-FET / Substitute of IRFR9024 |
Fairchild Semiconductor |
| 145 |
SFR9110TF |
100V P-Channel A-FET / Substitute of IRFR9110 |
Fairchild Semiconductor |
| 146 |
SFR9110TM |
100V P-Channel A-FET / Substitute of IRFR9110 |
Fairchild Semiconductor |
| 147 |
SFR9120TF |
100V P-Channel A-FET / Substitute of IRFR9120 |
Fairchild Semiconductor |
| 148 |
SFR9120TM |
100V P-Channel A-FET / Substitute of IRFR9120 |
Fairchild Semiconductor |
| 149 |
SFR9210TF |
200V P-Channel A-FET / Substitute of IRFR9210 |
Fairchild Semiconductor |
| 150 |
SFR9210TM |
200V P-Channel A-FET / Substitute of IRFR9210 |
Fairchild Semiconductor |
| | | |
