| No. |
Part Name |
Description |
Manufacturer |
| 121 |
BA3834S |
Band-pass filter for spectrum analyzer |
ROHM |
| 122 |
BA3834S/F |
Audio LSIs > Graphic equalizer > Band-pass filter for spectrum analyzer |
ROHM |
| 123 |
BA3835F |
Band-pass filter for spectrum analyzer |
ROHM |
| 124 |
BA3835S |
Band-pass filter for spectrum analyzer |
ROHM |
| 125 |
BA3835S/F |
Audio LSIs > Graphic equalizer > Band-pass filter for spectrum analyzer |
ROHM |
| 126 |
BFQ22S |
Silicon Planar Epitaxial NPN transistor, intended for use in UHF and microwave aerial amplifiers, radar systems, oscilloscopes, spectrum analyses, etc. |
Philips |
| 127 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 128 |
BSV15 |
Silicon PNP epitaxial planar transistor for medium AF power amplifiers and and for switching applications |
AEG-TELEFUNKEN |
| 129 |
BSX45 |
Silicon NPN epitaxial planar transistor for medium AF power amplifiers and for AF switching applications |
AEG-TELEFUNKEN |
| 130 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 131 |
CAY10 |
Gallium Arsenide parametric amplifier Varactor Diode |
Philips |
| 132 |
CGY11A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 133 |
CGY11B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 134 |
CGY12A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 135 |
CGY12B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 136 |
CGY13A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 137 |
CLED155 |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 138 |
CLED155 |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 139 |
CLED155F |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 140 |
CLED155F |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 141 |
CLED400 |
3 V, 50 mA, gallium arsenide infrared emitting diode |
Clairex Technologies |
| 142 |
CLED405 |
3 V, 60 mA, gallium aluminum arsenide infrared emitting diode |
Clairex Technologies |
| 143 |
CLED405 |
3 V, 60 mA, gallium aluminum arsenide infrared emitting diode |
Clairex Technologies |
| 144 |
CLI800W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 145 |
CLI810W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 146 |
CLI820W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 147 |
CLI830W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 148 |
CLI835W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 149 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
| 150 |
CXY10 |
Gallium arsenide diode with a high cut-off frequency for use in parametric amplifers, frequency multipliers and switches |
Mullard |
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