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Datasheets for VDR

Datasheets found :: 203
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
121 S2800A 10A silicon controlled rectifier. Vdrm, Vrrm 100V. General Electric Solid State
122 S2800B 10A silicon controlled rectifier. Vdrm, Vrrm 200V. General Electric Solid State
123 S2800C 10A silicon controlled rectifier. Vdrm, Vrrm 300V. General Electric Solid State
124 S2800D 10A silicon controlled rectifier. Vdrm, Vrrm 400V. General Electric Solid State
125 S2800E 10A silicon controlled rectifier. Vdrm, Vrrm 500V. General Electric Solid State
126 S2800F 10A silicon controlled rectifier. Vdrm, Vrrm 50V. General Electric Solid State
127 S2800M 10A silicon controlled rectifier. Vdrm, Vrrm 600V. General Electric Solid State
128 S2800N 10A silicon controlled rectifier. Vdrm, Vrrm 800V. General Electric Solid State
129 S2800S 10A silicon controlled rectifier. Vdrm, Vrrm 700V. General Electric Solid State
130 SM9103M DVDRAM Head Amplifier LSI Nippon Precision Circuits Inc
131 SM9403BM DVDRAM Servo-amplifier LSI Nippon Precision Circuits Inc
132 T2300A 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 100 V. General Electric Solid State
133 T2300B 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 200 V. General Electric Solid State
134 T2300D 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 400 V. General Electric Solid State
135 T2300F 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 50 V. General Electric Solid State
136 T2300M 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 600 V. General Electric Solid State
137 T2300N 2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 800 V. General Electric Solid State
138 T2301A 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 100 V. General Electric Solid State
139 T2301B 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 200 V. General Electric Solid State
140 T2301D 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 400 V. General Electric Solid State
141 T2301F 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 50 V. General Electric Solid State
142 T2301M 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 600 V. General Electric Solid State
143 T2301N 2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 800 V. General Electric Solid State
144 T2302A 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 100 V. General Electric Solid State
145 T2302B 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. General Electric Solid State
146 T2302D 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 400 V. General Electric Solid State
147 T2302F 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 50 V. General Electric Solid State
148 T2302M 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 600 V. General Electric Solid State
149 T2302N 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 800 V. General Electric Solid State
150 T2322B 2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. General Electric Solid State


Datasheets found :: 203
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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