No. |
Part Name |
Description |
Manufacturer |
121 |
BCY79VII |
PNP low noise transistor |
FERRANTI |
122 |
BCY79VII |
General Purpose PNP Transistor, metal case |
IPRS Baneasa |
123 |
BCY79VII |
Silicon PNP Epitaxial-Planar Transistor |
IPRS Baneasa |
124 |
BCY79VII |
PNP switching transistors |
Philips |
125 |
BCY79VII |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
126 |
BCY79VIII |
Silicon PNP Epitaxial Planar Transistor |
AEG-TELEFUNKEN |
127 |
BCY79VIII |
Switching PNP transistor |
FERRANTI |
128 |
BCY79VIII |
General purpose PNP transistor |
FERRANTI |
129 |
BCY79VIII |
PNP low noise transistor |
FERRANTI |
130 |
BCY79VIII |
General Purpose PNP Transistor, metal case |
IPRS Baneasa |
131 |
BCY79VIII |
Silicon PNP Epitaxial-Planar Transistor |
IPRS Baneasa |
132 |
BCY79VIII |
PNP switching transistors |
Philips |
133 |
BCY79VIII |
PNP transistors for low-noise NF pre- and driver stages |
Siemens |
134 |
BCY79VIII |
LOW NOISE AUDIO AMPLIFIER |
ST Microelectronics |
135 |
MAX2550 |
Band I, V, and VIII WCDMA Femtocell Transceiver with GSM Monitoring |
MAXIM - Dallas Semiconductor |
136 |
MAX2550ETN+ |
Band I, V, and VIII WCDMA Femtocell Transceiver with GSM Monitoring |
MAXIM - Dallas Semiconductor |
137 |
MAX2550ETN+G2Z |
Band I, V, and VIII WCDMA Femtocell Transceiver with GSM Monitoring |
MAXIM - Dallas Semiconductor |
138 |
MAX2550ETN+T |
Band I, V, and VIII WCDMA Femtocell Transceiver with GSM Monitoring |
MAXIM - Dallas Semiconductor |
139 |
MAX2550ETN+TG2Z |
Band I, V, and VIII WCDMA Femtocell Transceiver with GSM Monitoring |
MAXIM - Dallas Semiconductor |
140 |
MAX2550ETN+TW |
Band I, V, and VIII WCDMA Femtocell Transceiver with GSM Monitoring |
MAXIM - Dallas Semiconductor |
141 |
MAX2550ETN+W |
Band I, V, and VIII WCDMA Femtocell Transceiver with GSM Monitoring |
MAXIM - Dallas Semiconductor |
142 |
MAX2550EVKIT# |
Band I, V, and VIII WCDMA Femtocell Transceiver with GSM Monitoring |
MAXIM - Dallas Semiconductor |
143 |
STB100N10F7 |
N-channel 100 V, 0.0068 Ohm typ., 80 A, STripFET(TM) VII DeepGATE Power MOSFET in D2PAK package |
ST Microelectronics |
144 |
STD100N10F7 |
N-channel 100 V, 0.0068 Ohm typ., 80 A, STripFET(TM) VII DeepGATE Power MOSFET in DPAK package |
ST Microelectronics |
145 |
STD25N10F7 |
N-channel 100 V, 0.027 Ohm typ., 25 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
146 |
STD30N10F7 |
N-channel 100 V, 0.02 Ohm typ., 35 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
147 |
STD45N10F7 |
N-channel 100 V, 0.013 Ohm typ., 45 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
148 |
STD80N10F7 |
N-channel 100 V, 0.0085 Ohm typ., 70 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
149 |
STF100N10F7 |
N-channel 100 V, 0.0068 Ohm typ., 80 A, STripFET(TM) VII DeepGATE Power MOSFET in TO-220FP package |
ST Microelectronics |
150 |
STF110N10F7 |
N-channel 100 V, 5.1 mOhm typ., 45 A, STripFET(TM) VII DeepGATE Power MOSFET in TO-220FP package |
ST Microelectronics |
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