No. |
Part Name |
Description |
Manufacturer |
121 |
1N6085 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
122 |
1N6086 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
123 |
1N6087 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
124 |
1N6088 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
125 |
1N6089 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
126 |
1N6090 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
127 |
1N6091 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
128 |
1N6099 |
HIGH CONDUCTANCE LOW LEAKAGE DIODES |
BKC International Electronics |
129 |
1N6099 |
High conductance low leakage diode. Working inverse voltage 125 V. |
Fairchild Semiconductor |
130 |
1N6819 |
LOW LEAKAGE CURRENT SCHOTTKY DIODE |
Microsemi |
131 |
2N2217 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
132 |
2N2218 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
133 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
134 |
2N2220 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
135 |
2N2221 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
136 |
2N2222 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
137 |
2N2586 |
NPN Transistor General Purpose, low noise, high current gain, low leakage |
Amelco Semiconductor |
138 |
2N4117A |
Ultra Low Leakage, N-Channel JFETs |
Vishay |
139 |
2N4118A |
Ultra Low Leakage, N-Channel JFETs |
Vishay |
140 |
2N4119A |
Ultra Low Leakage, N-Channel JFETs |
Vishay |
141 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
142 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
143 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
144 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
145 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
146 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
147 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
148 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
149 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
150 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
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