| No. |
Part Name |
Description |
Manufacturer |
| 121 |
CXY10 |
Gallium arsenide diode with a high cut-off frequency for use in parametric amplifers, frequency multipliers and switches |
Mullard |
| 122 |
CXY10 |
Gallium arsenide varactor diode |
VALVO |
| 123 |
CXY11 |
Gallium arsenide, Gunn effect, element for the X-Band |
VALVO |
| 124 |
CXY11A |
Gunn effect diode |
mble |
| 125 |
CXY11A |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 126 |
CXY11A |
Gunn Effect Device |
Philips |
| 127 |
CXY11B |
Gunn effect diode |
mble |
| 128 |
CXY11B |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 129 |
CXY11B |
Gunn Effect Device |
Philips |
| 130 |
CXY11C |
Gunn effect diode |
mble |
| 131 |
CXY11C |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 132 |
CXY11C |
Gunn Effect Device |
Philips |
| 133 |
CXY12 |
Varactor diode |
mble |
| 134 |
CXY12 |
Gallium arsenide diode with a high cut-off frequency for use in frequency multipliers up to Q-Band |
Mullard |
| 135 |
CXY12 |
Gallium Arsenide Multiplier Varactor diode |
Philips |
| 136 |
CXY12 |
Gallium arsenide varactor diode |
VALVO |
| 137 |
CXY13 |
Gallium arsenide, Gunn effect, element for the X-Band |
VALVO |
| 138 |
CXY14 |
Gallium arsenide, Gunn effect, element for the J-Band (Ku-Band) |
VALVO |
| 139 |
CXY14A |
Gunn effect diode |
mble |
| 140 |
CXY14A |
Gunn Effect Device |
Philips |
| 141 |
CXY14B |
Gunn effect diode |
mble |
| 142 |
CXY14B |
Gunn Effect Device |
Philips |
| 143 |
CXY14C |
Gunn effect diode |
mble |
| 144 |
CXY16A |
Gunn effect diode |
mble |
| 145 |
CXY16B |
Gunn effect diode |
mble |
| 146 |
CXY16C |
Gunn effect diode |
mble |
| 147 |
CXY16D |
Gunn effect diode |
mble |
| 148 |
CXY16E |
Gunn effect diode |
mble |
| 149 |
CXY16F |
Gunn effect diode |
mble |
| 150 |
CXY17A |
Gunn effect diode |
mble |
| | | |
