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Datasheets for Y AM

Datasheets found :: 1067
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No. Part Name Description Manufacturer
121 2SA1982 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
122 2SA1989 For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini Isahaya Electronics Corporation
123 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO Isahaya Electronics Corporation
124 2SA2009 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
125 2SA2010 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
126 2SA2028 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
127 2SA2046 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
128 2SA2077 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
129 2SA2078 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
130 2SA2079 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
131 2SA2084 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
132 2SA2162 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
133 2SA2164 Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others Panasonic
134 2SA234 Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter Hitachi Semiconductor
135 2SA353 Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier Hitachi Semiconductor
136 2SA495G Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications TOSHIBA
137 2SA499 Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications TOSHIBA
138 2SA500 Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications TOSHIBA
139 2SA539 Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. USHA India LTD
140 2SA542 Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. USHA India LTD
141 2SA673AB PNP transistor for Low frequency amplifier, 50V, 500mA Hitachi Semiconductor
142 2SA673AC PNP transistor for Low frequency amplifier, 50V, 500mA Hitachi Semiconductor
143 2SA673AD PNP transistor for Low frequency amplifier, 50V, 500mA Hitachi Semiconductor
144 2SA673B PNP transistor for Low frequency amplifier, 50V, 500mA Hitachi Semiconductor
145 2SA673C PNP transistor for Low frequency amplifier, 50V, 500mA Hitachi Semiconductor
146 2SA673D PNP transistor for Low frequency amplifier, 50V, 500mA Hitachi Semiconductor
147 2SA683 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
148 2SA684 Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires Panasonic
149 2SA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING USHA India LTD
150 2SA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING USHA India LTD


Datasheets found :: 1067
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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