No. |
Part Name |
Description |
Manufacturer |
121 |
2SA1982 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
122 |
2SA1989 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
Isahaya Electronics Corporation |
123 |
2SA1993 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
124 |
2SA2009 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
125 |
2SA2010 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
126 |
2SA2028 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
127 |
2SA2046 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
128 |
2SA2077 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
129 |
2SA2078 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
130 |
2SA2079 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
131 |
2SA2084 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
132 |
2SA2162 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
133 |
2SA2164 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
134 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
135 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
136 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
137 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
138 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
139 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
140 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
141 |
2SA673AB |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
142 |
2SA673AC |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
143 |
2SA673AD |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
144 |
2SA673B |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
145 |
2SA673C |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
146 |
2SA673D |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
147 |
2SA683 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
148 |
2SA684 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
149 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
150 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
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