| No. |
Part Name |
Description |
Manufacturer |
| 12211 |
IXDN50N120AU1 |
High Voltage IGBT with Diode(Short Circuit SOA Capability) |
IXYS Corporation |
| 12212 |
IXRH50N100 |
1000V IGBT with reverse blocking capability |
IXYS |
| 12213 |
IXRH50N120 |
1200V IGBT with reverse blocking capability |
IXYS |
| 12214 |
IXSA15N120B |
S Series - Improved SCSOA Capability |
IXYS Corporation |
| 12215 |
IXSH15N120BD1 |
S Series - Improved SCSOA Capability |
IXYS Corporation |
| 12216 |
IXSH30N60AU1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability |
IXYS Corporation |
| 12217 |
IXSH30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 12218 |
IXSH30N60U1 |
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability |
IXYS Corporation |
| 12219 |
IXSH50N60B |
Short Circuit SOA Capability |
IXYS Corporation |
| 12220 |
IXSK30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 12221 |
IXSP15N120B |
S Series - Improved SCSOA Capability |
IXYS Corporation |
| 12222 |
IXST15N120BD1 |
S Series - Improved SCSOA Capability |
IXYS Corporation |
| 12223 |
IXST30N60CD1 |
Short Circuit SOA Capability |
IXYS Corporation |
| 12224 |
JAN2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
| 12225 |
JAN2N559-1 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12226 |
JAN2N559-2 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12227 |
JAN2N559-3 |
PNP germanium mesa transistor designed for military and industrial high-reliability, high-speed switching applications |
Motorola |
| 12228 |
JAN2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 12229 |
K2010A |
High reliability photocoupler, isolation 5000V, CTR=60 to 160% |
Cosmo Electronics |
| 12230 |
K2010B |
High reliability photocoupler, isolation 5000V, CTR=130 to 260% |
Cosmo Electronics |
| 12231 |
K2010C |
High reliability photocoupler, isolation 5000V, CTR=200 to 400% |
Cosmo Electronics |
| 12232 |
K2010D |
High reliability photocoupler, isolation 5000V, CTR=300 to 600% |
Cosmo Electronics |
| 12233 |
K2010E |
High reliability photocoupler, isolation 5000V, CTR=60 to 600% |
Cosmo Electronics |
| 12234 |
KC73133 |
1/3 INCH CCD IMAGE SENSOR FOR VGA COMPATIBILITY |
Samsung Electronic |
| 12235 |
KC73133C |
1/3 INCH CCD IMAGE SENSOR FOR VGA COMPATIBILITY |
Samsung Electronic |
| 12236 |
KCQ20A04 |
Similar to TO-247C(TO-3P)Case, Low Forward Voltage Drop, High Surge Current Capability |
Nihon |
| 12237 |
KM416C256DLJ-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
| 12238 |
KM416C256DLJ-6 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability |
Samsung Electronic |
| 12239 |
KM416C256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
| 12240 |
KM416C256DLT-5 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability |
Samsung Electronic |
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