| No. |
Part Name |
Description |
Manufacturer |
| 12271 |
CLY38-00 |
HiRel C-Band GaAs Power-MESFET |
Infineon |
| 12272 |
CLY38-05 |
HiRel C-Band GaAs Power-MESFET |
Infineon |
| 12273 |
CLY38-10 |
HiRel C-Band GaAs Power-MESFET |
Infineon |
| 12274 |
CLY5 |
High Power Packaged GaAs FET; +26.5 dBm |
TriQuint Semiconductor |
| 12275 |
CM100DU-12F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12276 |
CM100DU-24F |
Trench Gate Design Dual IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12277 |
CM100HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12278 |
CM100TJ-12F |
Trench Gate Design 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12279 |
CM100TJ-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12280 |
CM100TU-12F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12281 |
CM100TU-24F |
Trench Gate Design Six IGBTMOD�� 100 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12282 |
CM1200HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12283 |
CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12284 |
CM1200HA-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12285 |
CM1200HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12286 |
CM1200HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12287 |
CM1200HC-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12288 |
CM150DU-12F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12289 |
CM150DU-24F |
Trench Gate Design Dual IGBTMOD�� 150 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12290 |
CM150TJ-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12291 |
CM150TU-12F |
Trench Gate Design Six IGBTMOD�� 150 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12292 |
CM200DU-12F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12293 |
CM200DU-24F |
Trench Gate Design Dual IGBTMOD�� 200 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12294 |
CM200TU-12F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12295 |
CM200TU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 12296 |
CM200TU-5F |
Trench Gate Design Six IGBTMOD�� 200 Amperes/250 Volts |
Powerex Power Semiconductors |
| 12297 |
CM300DU-12F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12298 |
CM300DU-24F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12299 |
CM350DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 12300 |
CM350DU-5F |
Trench Gate Design Dual IGBTMOD�� 350 Amperes/250 Volts |
Powerex Power Semiconductors |
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