| No. |
Part Name |
Description |
Manufacturer |
| 12301 |
CM400DU-12F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12302 |
CM400DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 12303 |
CM400DU-5F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/250 Volts |
Powerex Power Semiconductors |
| 12304 |
CM400DY-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12305 |
CM400DY-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12306 |
CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12307 |
CM400HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12308 |
CM400HU-24F |
Trench Gate Design Single IGBTMOD�� 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12309 |
CM450HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 12310 |
CM450HA-5F |
Trench Gate Design Single IGBTMOD�� 450 Amperes/250 Volts |
Powerex Power Semiconductors |
| 12311 |
CM50DU-24F |
Trench Gate Design Dual IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12312 |
CM50TJ-24F |
Trench Gate Design Six IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12313 |
CM50TU-24F |
Trench Gate Design Six IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12314 |
CM600DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 12315 |
CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12316 |
CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12317 |
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12318 |
CM600HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 12319 |
CM600HA-5F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/250 Volts |
Powerex Power Semiconductors |
| 12320 |
CM600HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12321 |
CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 12322 |
CM600HU-12F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12323 |
CM600HU-24F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12324 |
CM75DU-12F |
Trench Gate Design Dual IGBTMOD�� 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12325 |
CM75DU-24F |
Trench Gate Design Dual IGBTMOD�� 75 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12326 |
CM75TJ-24F |
Trench Gate Design Six IGBTMOD�� 75 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12327 |
CM75TU-12F |
Trench Gate Design Six IGBTMOD�� 75 Amperes/600 Volts |
Powerex Power Semiconductors |
| 12328 |
CM75TU-24F |
Trench Gate Design Six IGBTMOD�� 75 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 12329 |
CM800DZ-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12330 |
CM800E2Z-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
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