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Datasheets for PER

Datasheets found :: 27870
Page: | 407 | 408 | 409 | 410 | 411 | 412 | 413 | 414 | 415 |
No. Part Name Description Manufacturer
12301 MAX6716UTSDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12302 MAX6716UTSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12303 MAX6716UTSHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12304 MAX6716UTSVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12305 MAX6716UTSYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12306 MAX6716UTTED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12307 MAX6716UTTGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12308 MAX6716UTTID3-T Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12309 MAX6716UTTWD3-T Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12310 MAX6716UTTZD3-T Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12311 MAX6716UTVDD3-T Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12312 MAX6716UTVFD3-T Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12313 MAX6716UTVHD3-T Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12314 MAX6716UTWED3-T Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12315 MAX6716UTWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12316 MAX6716UTWID3-T Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12317 MAX6716UTYDD3-T Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12318 MAX6716UTYFD3-T Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12319 MAX6716UTYHD3-T Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12320 MAX6716UTYVD3-T Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12321 MAX6716UTZED3-T Vcc1: 2.313 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12322 MAX6716UTZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12323 MAX6716UTZID3-T Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12324 MAX6716UTZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12325 MAX6717UKLTD3-T Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12326 MAX6717UKMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12327 MAX6717UKMSD3-T Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12328 MAX6717UKRDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12329 MAX6717UKRHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
12330 MAX6717UKRVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 27870
Page: | 407 | 408 | 409 | 410 | 411 | 412 | 413 | 414 | 415 |



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