| No. |
Part Name |
Description |
Manufacturer |
| 12301 |
5962F9860201VXC |
Radiation Hardened Hex Inverter with Open Drain Outputs |
Intersil |
| 12302 |
5962R1222403V9A |
Wide Vin Low-Dropout Voltage Regulator 0-XCEPT -25 to 125 |
Texas Instruments |
| 12303 |
5962R1222403VXC |
Wide Vin Low-Dropout Voltage Regulator 10-CFP -55 to 125 |
Texas Instruments |
| 12304 |
5962R1422801VXC |
Radiation Hardened 3Amp Sink/Source DDR Termination Regulator w/ Built-in VREF 16-CFP -55 to 125 |
Texas Instruments |
| 12305 |
5B38 |
Isolated Strain Gage Input Signal Conditioning Module |
Analog Devices |
| 12306 |
5B38-02 |
Isolated Strain Gage Input Signal Conditioning Module |
Analog Devices |
| 12307 |
5B38-04 |
Isolated Strain Gage Input Signal Conditioning Module |
Analog Devices |
| 12308 |
5B38-05 |
Isolated Strain Gage Input Signal Conditioning Module |
Analog Devices |
| 12309 |
5EQ100 |
8V 100A Hi-Rel Schottky Discrete Diode in a 18-pin LCC package |
International Rectifier |
| 12310 |
5EQ100 |
8V 100A Hi-Rel Schottky Discrete Diode in a 18-pin LCC package |
International Rectifier |
| 12311 |
5EQ100SCS |
8A 100V Hi-Rel Schottky Discrete Diode in a 18-pin LCC package |
International Rectifier |
| 12312 |
5EQ100SCS |
8A 100V Hi-Rel Schottky Discrete Diode in a 18-pin LCC package |
International Rectifier |
| 12313 |
5KP |
Diode TVS Single Uni-Dir 7.5V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 12314 |
5KP10 |
Diode TVS Single Uni-Dir 10V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 12315 |
5KP100 |
Diode TVS Single Uni-Dir 100V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 12316 |
5KP100 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 12317 |
5KP100A |
Diode TVS Single Uni-Dir 100V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 12318 |
5KP100A |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 12319 |
5KP100C |
Diode TVS Single Bi-Dir 100V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 12320 |
5KP100C |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 136 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 12321 |
5KP100CA |
Diode TVS Single Bi-Dir 100V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 12322 |
5KP100CA |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 111 V, Vbrmax = 123 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 12323 |
5KP10A |
Diode TVS Single Uni-Dir 10V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 12324 |
5KP10C |
Diode TVS Single Bi-Dir 10V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 12325 |
5KP10CA |
Diode TVS Single Bi-Dir 10V 5KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 12326 |
5KP11 |
Diode TVS Single Uni-Dir 11V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 12327 |
5KP110 |
Diode TVS Single Uni-Dir 110V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 12328 |
5KP110 |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 149 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| 12329 |
5KP110A |
Diode TVS Single Uni-Dir 110V 5KW 2-Pin Case P-6 |
New Jersey Semiconductor |
| 12330 |
5KP110A |
Transient voltage suppressor. Peak pulse power 5000 W. Breakdown voltage Vbrmin = 122 V, Vbrmax = 135 V. Test current It = 5.0 mA. |
Shanghai Sunrise Electronics |
| | | |
