| No. |
Part Name |
Description |
Manufacturer |
| 1231 |
ISPLSI5512VE-100LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 1232 |
ISPLSI5512VE-100LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 1233 |
ISPLSI5512VE-100LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 1234 |
ISPLSI5512VE-100LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 1235 |
ISPLSI5512VE-100LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 1236 |
ISPLSI5512VE-125LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1237 |
ISPLSI5512VE-125LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1238 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1239 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1240 |
ISPLSI5512VE-125LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1241 |
ISPLSI5512VE-125LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1242 |
ISPLSI5512VE-125LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1243 |
ISPLSI5512VE-125LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 1244 |
ISPLSI5512VE-155LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 1245 |
ISPLSI5512VE-155LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 1246 |
ISPLSI5512VE-155LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 1247 |
ISPLSI5512VE-155LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 1248 |
ISPLSI5512VE-80LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 1249 |
ISPLSI5512VE-80LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 1250 |
ISPLSI5512VE-80LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 1251 |
ISPLSI5512VE-80LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 1252 |
LD7015 |
3.3V spindle/VCM COMBO chip |
ldic |
| 1253 |
LDA08B |
265mW at 3.3V Supply Audio Power Amplifier with Shutdown Mode |
National Semiconductor |
| 1254 |
LM4900 |
265mW at 3.3V Supply Audio Power Amplifier with Shutdown Mode |
National Semiconductor |
| 1255 |
LM4900LD |
265mW at 3.3V Supply Audio Power Amplifier with Shutdown Mode |
National Semiconductor |
| 1256 |
LM4900LDX |
265mW at 3.3V Supply Audio Power Amplifier with Shutdown Mode |
National Semiconductor |
| 1257 |
LM4900M |
265mW at 3.3V Supply Audio Power Amplifier with Shutdown Mode |
National Semiconductor |
| 1258 |
LM4900MM |
265mW at 3.3V Supply Audio Power Amplifier with Shutdown Mode |
National Semiconductor |
| 1259 |
LM4900MMX |
265mW at 3.3V Supply Audio Power Amplifier with Shutdown Mode |
National Semiconductor |
| 1260 |
LM4900MX |
265mW at 3.3V Supply Audio Power Amplifier with Shutdown Mode |
National Semiconductor |
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