| No. |
Part Name |
Description |
Manufacturer |
| 1231 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1232 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1233 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 1234 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1235 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1236 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1237 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1238 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1239 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1240 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1241 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1242 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1243 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 1244 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1245 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 1246 |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1247 |
K4F171611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 1248 |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1249 |
K4F171612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 1250 |
K6F1016U4C-EF55 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 1251 |
K6F1016U4C-EF70 |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 1252 |
K6F1616R6M FAMILY |
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet |
Samsung Electronic |
| 1253 |
K6F1616T6B |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 1254 |
K6F1616T6B-EF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 1255 |
K6F1616T6B-EF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 1256 |
K6F1616T6B-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 1257 |
K6F1616T6B-TF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 1258 |
K6F1616T6B-TF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 1259 |
K6F1616T6C |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 1260 |
K6F1616T6C-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
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