No. |
Part Name |
Description |
Manufacturer |
1231 |
JANTXV1N4130CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
1232 |
JANTXV1N5530C-1 |
Low Voltage Avalanche Zener |
Microsemi |
1233 |
JANTXV1N5530CUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
1234 |
KDV1430C |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
1235 |
KF630C |
NPN transistor for RF amplifiers |
Tesla Elektronicke |
1236 |
KM416S4030C |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
1237 |
KM416S4030CT-F10 |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
1238 |
KM416S4030CT-F7 |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
1239 |
KM416S4030CT-F8 |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
1240 |
KM416S4030CT-FH |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
1241 |
KM416S4030CT-FL |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
1242 |
KM416S4030CT-G |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
1243 |
KM416S4030CT-G7 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
1244 |
KM416S4030CT-G8 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
1245 |
KM416S4030CT-GH |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
1246 |
KM416S4030CT-GL |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
1247 |
KM416S4030CT-L10 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
1248 |
KM432S2030C |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1249 |
KM432S2030CT-F10 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1250 |
KM432S2030CT-F6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1251 |
KM432S2030CT-F7 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1252 |
KM432S2030CT-F8 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1253 |
KM432S2030CT-G10 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1254 |
KM432S2030CT-G6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1255 |
KM432S2030CT-G7 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1256 |
KM432S2030CT-G8 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
1257 |
KM44S16030CT-G_F10 |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
1258 |
KM44S16030CT-G_F7 |
143MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
1259 |
KM44S16030CT-G_F8 |
125MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
1260 |
KM44S16030CT-G_FH |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
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