| No. |
Part Name |
Description |
Manufacturer |
| 1231 |
MZ4623 |
Zener diode, 500 mW, zener voltage 4.3V |
Motorola |
| 1232 |
MZ500-7 |
400mW Miniature plastic encalsulated Zener Diode, 4.3V |
Motorola |
| 1233 |
MZ5521B |
Low voltage avalanche passivated silicon oxide zener regulator diodes, 500 mW, zener voltage 4.3V |
Motorola |
| 1234 |
MZP4731A |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. +-5% tolerance. |
Motorola |
| 1235 |
MZP4731C |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. +-2% tolerance. |
Motorola |
| 1236 |
MZP4731D |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. +-1% tolerance. |
Motorola |
| 1237 |
MZT4550 |
50 watt zener transient suppressor. Nom zener voltage 4.3 V. |
Motorola |
| 1238 |
NE56632-43D |
Active-LOW system reset with adjustable delay time, 4.3V |
Philips |
| 1239 |
NEZ3642-4DD |
3.6GHz to 4.3GHz high output amplifier |
NEC |
| 1240 |
NJU9214FG1 |
4.3/4 DIGIT SINGLE CHIP DIGITAL MULTIMETER LSI |
New Japan Radio |
| 1241 |
NNCD4.3A |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE |
NEC |
| 1242 |
NNCD4.3B |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 500 mW TYPE |
NEC |
| 1243 |
NNCD4.3C |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE |
NEC |
| 1244 |
NNCD4.3D |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE |
NEC |
| 1245 |
NNCD4.3E |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE |
NEC |
| 1246 |
NNCD4.3F |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD |
NEC |
| 1247 |
NNCD4.3G |
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE : COMMON ANODE 5 PIN MINI MOLD |
NEC |
| 1248 |
NTE5008SM |
Zener diode, 300watt, + - 5 % tolerance. Nominal zener voltage Vz = 4.3V, Zener test current Izt = 5mA. |
NTE Electronics |
| 1249 |
NTE5114A |
Zener diode, 5 watt, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Test current Izt = 290mA. |
NTE Electronics |
| 1250 |
NTE5175A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Zener test current Izt = 580mA. |
NTE Electronics |
| 1251 |
NTE5241AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Zener test current Izt = 2900mA. |
NTE Electronics |
| 1252 |
NTLJD2104P |
Power MOSFET, 12V, 4.3A, 90mOhm Dual P Channel WDFN2x2 |
ON Semiconductor |
| 1253 |
NTLJD2105L |
Power MOSFET, 8 V, 4.3 A, µCool™ High Side Load Switch with Level Shift |
ON Semiconductor |
| 1254 |
NTLJF1103P |
Power MOSFET and Schottky Diode -8 V, -4.3 A, µCool¿ P-Channel, with 2.0 A Schottky Barrier Diode, 2 x 2 mm, WDFN |
ON Semiconductor |
| 1255 |
NX8560LJ429-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1542.91 nm. Frequency 194.30 THz. FC-UPC connector. |
NEC |
| 1256 |
NX8560LJ429-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1542.91 nm. Frequency 194.30 THz. SC-UPC connector. |
NEC |
| 1257 |
NX8560SJ425-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1542.539 nm. Frequency 194.35 THz. FC-UPC connector. |
NEC |
| 1258 |
NX8560SJ425-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1542.539 nm. Frequency 194.35 THz. SC-UPC connector. |
NEC |
| 1259 |
NX8560SJ429-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1542.936 nm. Frequency 194.30 THz. FC-UPC connector. |
NEC |
| 1260 |
NX8560SJ429-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1542.936 nm. Frequency 194.30 THz. SC-UPC connector. |
NEC |
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