| No. |
Part Name |
Description |
Manufacturer |
| 1231 |
BXY21CB |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 1232 |
BXY22G |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 1233 |
BXY22G |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 1234 |
BXY22H |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 1235 |
BXY22H |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 1236 |
BXY22J |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 1237 |
BXY22J |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 1238 |
BXY23 |
Junction varactors for use in the GHz range (e.g. modulation and tuning) |
Siemens |
| 1239 |
BXY23 |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 1240 |
BXY24EA |
Silicon varactor for frequency multiplication up to the GHz range |
Siemens |
| 1241 |
BXY28 |
Silicon planar epitaxial varactor diode for use in high C efficiency multipliers in the 2-4 GHz range |
Mullard |
| 1242 |
BXY29 |
Silicon planar epitaxial varactor diode for use in frequency multiplier circuits in the 4-8GHz range |
Mullard |
| 1243 |
BXY43A |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 1244 |
BXY43B |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 1245 |
BXY43B |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 1246 |
BXY43C |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 1247 |
BXY43C |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 1248 |
BXY44E |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 1249 |
BXY44E |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 1250 |
BXY58EA |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 1251 |
BXY58EA |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 1252 |
BXY59D |
PIN diode for phase shifters and switching applications in the GHz range |
Siemens |
| 1253 |
BXY59D |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 1254 |
BZX55_C100 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 100 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1255 |
BZX55_C110 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 110 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1256 |
BZX55_C120 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 120 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1257 |
BZX55_C130 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 130 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1258 |
BZX55_C150 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 150 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1259 |
BZX55_C160 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 160 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| 1260 |
BZX55_C180 |
Silicon planar zener diode. 0.5 W. Zener voltage range Vznom = 180 V, Izt = 1 mA for Vzt . |
Chenyi Electronics |
| | | |
