No. |
Part Name |
Description |
Manufacturer |
1231 |
INA3010DW |
INFRARED REMOTE CONTROL TRANSMITTER RC-5 |
INTEGRAL |
1232 |
INA3010N |
INFRARED REMOTE CONTROL TRANSMITTER RC-5 |
INTEGRAL |
1233 |
ISPLSI1048C-50LG/883 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
1234 |
K4E640812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1235 |
K4E640812B-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1236 |
K4E640812C-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1237 |
K4E640812C-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1238 |
K4E641612C-50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1239 |
K4E660812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1240 |
K4E660812B-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1241 |
K4E660812C-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1242 |
K4E660812C-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
1243 |
K4E661612C-50 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
1244 |
K4F640811B-JC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
1245 |
K4F640811B-TC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
1246 |
K4F660811B-JC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
1247 |
K4F660811B-TC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
1248 |
LC4032ZC-5M56C |
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs |
Lattice Semiconductor |
1249 |
LC4032ZC-5M56I |
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs |
Lattice Semiconductor |
1250 |
LC4032ZC-5T48C |
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs |
Lattice Semiconductor |
1251 |
LC4032ZC-5T48I |
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs |
Lattice Semiconductor |
1252 |
LC4064ZC-5M132C1 |
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs |
Lattice Semiconductor |
1253 |
LC4064ZC-5M56C |
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs |
Lattice Semiconductor |
1254 |
LC4064ZC-5T100C |
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs |
Lattice Semiconductor |
1255 |
LC4064ZC-5T48C |
3.3V/2.5V/1.8V In-System Programmable SuperFAST High density PDLs |
Lattice Semiconductor |
1256 |
LC51024MC-52F484C |
1.8V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
1257 |
LC51024MC-52F672C |
1.8V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
1258 |
LC51024MC-52FN484C |
1.8V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
1259 |
LC51024MC-52FN672C |
1.8V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
1260 |
LC5256MC-5F256C |
1.8V in-system programmable expanded programmable logic device XPLD. |
Lattice Semiconductor |
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