| No. |
Part Name |
Description |
Manufacturer |
| 1231 |
BFS86 |
Silicon NPN epitaxial planar transistor for VHF/UHF power stages, oscillators and driver stages. Especially for aerial amplifier circuits |
AEG-TELEFUNKEN |
| 1232 |
BFY69 |
Silicon NPN epitaxial planar transistor for AF and RF amplifiers in hybrid circuits |
AEG-TELEFUNKEN |
| 1233 |
BFY69A |
Silicon NPN epitaxial planar transistor for AF and RF amplifiers in hybrid circuits |
AEG-TELEFUNKEN |
| 1234 |
BFY87 |
Silicon NPN epitaxial planar transistor for AF and RF amplifiers in hybrid circuits |
AEG-TELEFUNKEN |
| 1235 |
BFY87A |
Silicon NPN epitaxial planar transistor for AF and RF amplifiers in hybrid circuits |
AEG-TELEFUNKEN |
| 1236 |
BLK-18 |
Coaxial DC Block 0.01 to 18 GHz |
Mini-Circuits |
| 1237 |
BLK-89 |
Coaxial DC Block SMA 0.0001 to 8 GHz |
Mini-Circuits |
| 1238 |
BSAK215MN |
βSAK215MN Pulse shaper circuits for revolution counters |
IPRS Baneasa |
| 1239 |
BSAK215N |
βSAK215N Pulse shaper circuits for revolution counters |
IPRS Baneasa |
| 1240 |
BSAK215VN |
βSAK215VN Pulse shaper circuits for revolution counters |
IPRS Baneasa |
| 1241 |
BSW11 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits |
AEG-TELEFUNKEN |
| 1242 |
BSW12 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 |
AEG-TELEFUNKEN |
| 1243 |
BSX72 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
| 1244 |
BSX75 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
| 1245 |
BTDA2581 |
βTDA2581 Control Circuits for SPMS |
IPRS Baneasa |
| 1246 |
BTDA2582 |
βTDA2582 Control Circuits for SPMS |
IPRS Baneasa |
| 1247 |
BU204 |
NPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 2.5Amp, 1300V, 36Watt. |
USHA India LTD |
| 1248 |
BU205 |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W. |
USHA India LTD |
| 1249 |
BU208 |
NPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 5Amp, 1300V, 12.5Watt. |
USHA India LTD |
| 1250 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 1251 |
BU508D |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 1252 |
BUTB0010 |
βUTB0010 Monolithic integrated subscriber line interface circuits (SLIC) |
IPRS Baneasa |
| 1253 |
BUTB0011 |
βUTB0011 Monolithic integrated subscriber line interface circuits (SLIC) |
IPRS Baneasa |
| 1254 |
BXY29 |
Silicon planar epitaxial varactor diode for use in frequency multiplier circuits in the 4-8GHz range |
Mullard |
| 1255 |
BY176 |
Silicon E.H.T. Rectifier Diode intended for tripler voltage circuits |
Philips |
| 1256 |
BY187 |
Silicon E.H.T. Rectifier Diode, intended for tripler circuits |
Philips |
| 1257 |
BZX84/C10 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 10V |
Siemens |
| 1258 |
BZX84/C11 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 11V |
Siemens |
| 1259 |
BZX84/C12 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 12V |
Siemens |
| 1260 |
BZX84/C4V7 |
Si Planar Z Diodes 150mW for Thin and Thick-Film Circuits 4.7V |
Siemens |
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