| No. |
Part Name |
Description |
Manufacturer |
| 1231 |
2SC3351-T1B |
For amplify low noise and high frequency. |
NEC |
| 1232 |
2SC3351-T2B |
For amplify low noise and high frequency. |
NEC |
| 1233 |
2SC3354 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 1234 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1235 |
2SC3355-T |
For amplify low noise and high frequency |
NEC |
| 1236 |
2SC3356-L |
For amplify low noise and high frequency |
NEC |
| 1237 |
2SC3356-T1B |
For amplify low noise and high frequency |
NEC |
| 1238 |
2SC3356-T2B |
For amplify low noise and high frequency |
NEC |
| 1239 |
2SC3356-VM |
For amplify low noise and high frequency |
NEC |
| 1240 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| 1241 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 1242 |
2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1243 |
2SC3422 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING |
TOSHIBA |
| 1244 |
2SC3423 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1245 |
2SC3444 |
FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1246 |
2SC3495 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1247 |
2SC3526(H) |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1248 |
2SC3526H |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1249 |
2SC3576 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1250 |
2SC3624 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 1251 |
2SC3624A |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 1252 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1253 |
2SC3651 |
High Gain, Low Frequency, General Purpose NPN Amplifier Transistor |
ON Semiconductor |
| 1254 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1255 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
| 1256 |
2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1257 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 1258 |
2SC3663-L |
For amplify high frequency and low noise. |
NEC |
| 1259 |
2SC3663-T1B |
For amplify high frequency and low noise. |
NEC |
| 1260 |
2SC3663-T2B |
For amplify high frequency and low noise. |
NEC |
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