| No. |
Part Name |
Description |
Manufacturer |
| 1231 |
ASY57N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 1232 |
ASY58N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 1233 |
ASY59N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 1234 |
ASY63N |
PNP Germanium RF Alloy Transistor in TO1 metal case |
Newmarket Transistors NKT |
| 1235 |
ASY76 |
PNP Germanium AF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 1236 |
ASY77 |
PNP Germanium AF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 1237 |
ASY80 |
PNP Germanium AF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
| 1238 |
ATL25 |
The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi |
Atmel |
| 1239 |
ATL35 |
The ATL35 series ASIC family is fabricated on a 0.35 micron CMOS process with up to four levels of metal. This family features arrays with up to 2.7 million routable gates and 976 pins. The high density and high pin count capabilities of t |
Atmel |
| 1240 |
ATL60 |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools. |
Atmel |
| 1241 |
BA103 |
Silicon diode in metal case |
Siemens |
| 1242 |
BA104 |
Silicon diode in metal case |
Siemens |
| 1243 |
BA105 |
Silicon diode in metal case |
Siemens |
| 1244 |
BA108 |
Silicon diode in metal case |
Siemens |
| 1245 |
BC107 |
0.600W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.200A Ic, 110 - 450 hFE. |
Continental Device India Limited |
| 1246 |
BC107 |
General Purpose NPN Transistor, metal case |
IPRS Baneasa |
| 1247 |
BC107A |
0.600W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.200A Ic, 110 - 220 hFE. |
Continental Device India Limited |
| 1248 |
BC107A |
General Purpose NPN Transistor, metal case |
IPRS Baneasa |
| 1249 |
BC107B |
0.600W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 1250 |
BC107B |
General Purpose NPN Transistor, metal case |
IPRS Baneasa |
| 1251 |
BC107C |
0.600W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.200A Ic, 100 hFE. |
Continental Device India Limited |
| 1252 |
BC107C |
General Purpose NPN Transistor, metal case |
IPRS Baneasa |
| 1253 |
BC107VI |
General Purpose NPN Transistor, metal case |
IPRS Baneasa |
| 1254 |
BC108 |
0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 110 - 800 hFE. |
Continental Device India Limited |
| 1255 |
BC108 |
General Purpose NPN Transistor, metal case |
IPRS Baneasa |
| 1256 |
BC108A |
0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 110 - 220 hFE. |
Continental Device India Limited |
| 1257 |
BC108A |
General Purpose NPN Transistor, metal case |
IPRS Baneasa |
| 1258 |
BC108B |
0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 1259 |
BC108B |
General Purpose NPN Transistor, metal case |
IPRS Baneasa |
| 1260 |
BC108C |
0.600W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.200A Ic, 100 hFE. |
Continental Device India Limited |
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