| No. |
Part Name |
Description |
Manufacturer |
| 1231 |
PMK35EP |
P-channel TrenchMOS extremely low level FET |
Nexperia |
| 1232 |
PMK35EP |
P-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 1233 |
PMK50XP |
P-channel TrenchMOS extremely low level FET |
Nexperia |
| 1234 |
PMK50XP |
P-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 1235 |
PMN50XP |
P-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 1236 |
PMR290XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 1237 |
PMR290XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 1238 |
PMR290XN |
N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 1239 |
PMR290XN |
PMR290XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 1240 |
PMR370XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 1241 |
PMR370XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 1242 |
PMR370XN |
N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 1243 |
PMR370XN |
PMR370XN; N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 1244 |
PMV31XN |
uTrenchMOS (tm) extremely low level FET |
Philips |
| 1245 |
PMV31XN |
PMV31XN; uTrenchMOS (tm) extremely low level FET |
Philips |
| 1246 |
PMV56XN |
PMV56XN; uTrenchmos (tm) extremely low level FET |
Philips |
| 1247 |
PMV56XN |
uTrenchmos (tm) extremely low level FET |
Philips |
| 1248 |
PMV65XP |
P-channel TrenchMOS(tm) extremely low level FET |
Philips |
| 1249 |
PMV65XP |
PMV65XP; P-channel TrenchMOS(tm) extremely low level FET |
Philips |
| 1250 |
PMWD20XN |
PMWD20XN; Dual N-channel uTrenchmos (tm) extremely low level FET |
Philips |
| 1251 |
PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET |
Philips |
| 1252 |
PMZ250UN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 1253 |
PMZ270XN |
N-channel TrenchMOS extremely low level FET |
Nexperia |
| 1254 |
PMZ270XN |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
| 1255 |
PZTA29 |
Applications requiring extremely high current gain at collector currents to 500mA |
Fairchild Semiconductor |
| 1256 |
Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
| 1257 |
Q62702-C2479 |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 1258 |
Q62702-C2481 |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 1259 |
Q62702-F456 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
| 1260 |
Q62702-F457 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
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