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Datasheets for STOR P

Datasheets found :: 1357
Page: | 38 | 39 | 40 | 41 | 42 | 43 | 44 | 45 | 46 |
No. Part Name Description Manufacturer
1231 MTT80N1200 Thyristor Power Block IPRS Baneasa
1232 MTT80N1400 Thyristor Power Block IPRS Baneasa
1233 MTT80N1600 Thyristor Power Block IPRS Baneasa
1234 MTT80N1800 Thyristor Power Block IPRS Baneasa
1235 MTT80N400 Thyristor Power Block IPRS Baneasa
1236 MTT80N600 Thyristor Power Block IPRS Baneasa
1237 MTT80N800 Thyristor Power Block IPRS Baneasa
1238 MUN2112T3 Bias Resistor Transistor PNP ON Semiconductor
1239 MUN2114 BRT Transistor PNP ON Semiconductor
1240 MUN2114T1 BRT Transistor PNP ON Semiconductor
1241 MUN2114T3 Bias Resistor Transistor PNP ON Semiconductor
1242 MUN5111 Bias Resistor Transistor PNP ON Semiconductor
1243 MUN5111T1 Bias Resistor Transistor PNP ON Semiconductor
1244 MUN5111T1-D Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network ON Semiconductor
1245 MUN5112 Bias Resistor Transistor PNP ON Semiconductor
1246 MUN5112T1 Bias Resistor Transistor PNP ON Semiconductor
1247 MUN5113 Bias Resistor Transistor PNP ON Semiconductor
1248 MUN5113T1 Bias Resistor Transistor PNP ON Semiconductor
1249 MUN5113T3 Bias Resistor Transistor PNP ON Semiconductor
1250 MXT3906 General Purpose Transistor PNP silicon Motorola
1251 MXTA64 Darlington Transistor PNP silicon Motorola
1252 MXTA77 Darlington Transistor PNP silicon Motorola
1253 MXTA92 High Voltage Transistor PNP silicon Motorola
1254 MXTA93 High Voltage Transistor PNP silicon Motorola
1255 NDH833N Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.1 A Voltage Vgs th max. 2.7 V Voltage Vds max 20 V Fairchild Semiconductor
1256 NDH8436 Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V Fairchild Semiconductor
1257 NDH853N Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V Fairchild Semiconductor
1258 NDH854P Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V Fairchild Semiconductor
1259 NST2907 Switching Transistor PNP Silicon ON Semiconductor
1260 NTE183 Silicon complementary transistor PNP. General purpose amplifier, switch. NTE Electronics


Datasheets found :: 1357
Page: | 38 | 39 | 40 | 41 | 42 | 43 | 44 | 45 | 46 |



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