| No. |
Part Name |
Description |
Manufacturer |
| 12331 |
1N617 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 12332 |
1N6170 |
Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12333 |
1N6170A |
Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12334 |
1N6170US |
Diode TVS Single Bi-Dir 114V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 12335 |
1N6171 |
Diode TVS Single Bi-Dir 121.6V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12336 |
1N6171A |
Diode TVS Single Bi-Dir 121.6V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12337 |
1N6172 |
Diode TVS Single Bi-Dir 136.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12338 |
1N6172A |
Diode TVS Single Bi-Dir 136.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12339 |
1N6173 |
Diode TVS Single Bi-Dir 152V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12340 |
1N6173A |
Diode TVS Single Bi-Dir 152V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 12341 |
1N6173US |
Diode TVS Single Bi-Dir 152V 1.5KW 2-Pin SMD |
New Jersey Semiconductor |
| 12342 |
1N618 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 12343 |
1N619 |
Silicon Planar Diode |
ITT Semiconductors |
| 12344 |
1N62 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 12345 |
1N62 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 12346 |
1N625 |
Silicon Planar Diode |
ITT Semiconductors |
| 12347 |
1N625 |
Diode Data |
National Semiconductor |
| 12348 |
1N626 |
Silicon Planar Diode |
ITT Semiconductors |
| 12349 |
1N6263 |
Leaded Silicon Diode Schottky |
Central Semiconductor |
| 12350 |
1N6263 |
Schottky Diodes |
General Semiconductor |
| 12351 |
1N6264 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 12352 |
1N6265 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 12353 |
1N6266 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 12354 |
1N6267 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 12355 |
1N6267 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 12356 |
1N6267 |
Diode TVS Single Uni-Dir 5.5V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 12357 |
1N6267A |
Leaded Zener Diode Transient Supressor |
Central Semiconductor |
| 12358 |
1N6267A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 12359 |
1N6267A |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 12360 |
1N6267A |
Diode TVS Single Uni-Dir 5.8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
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