| No. |
Part Name |
Description |
Manufacturer |
| 12331 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 12332 |
HN1V01H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 12333 |
HN1V02H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 12334 |
HN2A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 12335 |
HN2C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 12336 |
HN2C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12337 |
HN2C12FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12338 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 12339 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 12340 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 12341 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 12342 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 12343 |
HN2V02H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 12344 |
HN327 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12345 |
HN328 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12346 |
HN337 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12347 |
HN338 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12348 |
HN3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12349 |
HN3904 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12350 |
HN3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12351 |
HN3906 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12352 |
HN3B01F |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 12353 |
HN3B02FU |
Transistor Silicon PNP�NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 12354 |
HN3C10FE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12355 |
HN3C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12356 |
HN3C12 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 12357 |
HN3C14 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 12358 |
HN3C14FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12359 |
HN4B101J |
Power transistor for high-speed switching applications |
TOSHIBA |
| 12360 |
HN4B102J |
Power transistor for high-speed switching applications |
TOSHIBA |
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