| No. |
Part Name |
Description |
Manufacturer |
| 12421 |
NTE584 |
Silicon Schottky Diode |
NTE Electronics |
| 12422 |
NTE585 |
Silicon Rectifier Diode Schottky Barrier, Fast Switching |
NTE Electronics |
| 12423 |
NTE586 |
Silicon Rectifier Diode Schottky Barrier, Fast Switching |
NTE Electronics |
| 12424 |
NTE6080 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 12425 |
NTE6081 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 12426 |
NTE6082 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 12427 |
NTE6083 |
Schottky Barrier Rectifier |
NTE Electronics |
| 12428 |
NTE6084 |
Silicon Rectifier Schottky Barrier |
NTE Electronics |
| 12429 |
NTE6086 |
Silicon Dual Schottky Rectifier |
NTE Electronics |
| 12430 |
NTE6087 |
Schottky Barrier Silicon Rectifier |
NTE Electronics |
| 12431 |
NTE6088 |
Silicon Dual Schottky Rectifier |
NTE Electronics |
| 12432 |
NTE6091 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 12433 |
NTE6092 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 12434 |
NTE6093 |
Silicon Rectifier Dual, Schottky Barrier |
NTE Electronics |
| 12435 |
NTE6094 |
Silicon Rectifier Schottky Barrier |
NTE Electronics |
| 12436 |
NTE6248 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
| 12437 |
NTE8212 |
Integrated Circuit Schottky, 8-Bit Input/Output Port |
NTE Electronics |
| 12438 |
NTGD3147F |
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 |
ON Semiconductor |
| 12439 |
NTGD4169F |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 |
ON Semiconductor |
| 12440 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
| 12441 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
| 12442 |
NTHD3133PF |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
| 12443 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 12444 |
NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 12445 |
NTHD4N02F |
Power MOSFET and Schottky Diode |
ON Semiconductor |
| 12446 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 12447 |
NTHD4N02FT1 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 12448 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 12449 |
NTHD4N02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™ |
ON Semiconductor |
| 12450 |
NTHD4P02 |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET |
ON Semiconductor |
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