| No. |
Part Name |
Description |
Manufacturer |
| 12511 |
K4F160412C-B60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 12512 |
K4F160412C-F50 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
| 12513 |
K4F160412C-F60 |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
| 12514 |
K4F160412D |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 12515 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 12516 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 12517 |
K4F160811D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 12518 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 12519 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 12520 |
K4F160812D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 12521 |
K4F160812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 12522 |
K4F160812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 12523 |
K4S160822D |
1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 12524 |
K4S160822DT-G/F10 |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 12525 |
K4S160822DT-G/F7 |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 12526 |
K4S160822DT-G/F8 |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 12527 |
K4S160822DT-G/FH |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 12528 |
K4S160822DT-G/FL |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
| 12529 |
K7R160982B |
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM |
Samsung Electronic |
| 12530 |
K9F1608W0A |
-2M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 12531 |
K9F1608W0A-TCB0 |
2M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 12532 |
K9F1608W0A-TIB0 |
2M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 12533 |
KC1850 |
C-values 220 pF - 0.01 µF, Voltage 63 - 160 VDC, Flat and linear TC, PCM 5 |
Vishay |
| 12534 |
KD100HB160 |
DIODE MODULES |
SanRex |
| 12535 |
KD110F160 |
DIODE MODULES |
SanRex |
| 12536 |
KD25F160 |
DIODE MODULES |
SanRex |
| 12537 |
KD30HB160 |
DIODE MODULES |
SanRex |
| 12538 |
KD40F160 |
DIODE MODULES |
SanRex |
| 12539 |
KD55F160 |
DIODE MODULES |
SanRex |
| 12540 |
KD60HB160 |
DIODE MODULES |
SanRex |
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