| No. |
Part Name |
Description |
Manufacturer |
| 12511 |
BF998 |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 12512 |
BF998 |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 12513 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 12514 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 12515 |
BF998 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 12516 |
BF998A |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 12517 |
BF998B |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 12518 |
BF998R |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 12519 |
BF998R |
Silicon N-channel dual-gate MOS-FETs |
Philips |
| 12520 |
BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 12521 |
BF998R |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 12522 |
BF998R |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 12523 |
BF998RA |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 12524 |
BF998RAW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 12525 |
BF998RB |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 12526 |
BF998RBW |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode |
Vishay |
| 12527 |
BF998RW |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode |
Vishay |
| 12528 |
BF998W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 12529 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 12530 |
BF998W |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 12531 |
BF998WR |
N-channel dual-gate MOSFET |
NXP Semiconductors |
| 12532 |
BF998WR |
N-channel dual-gate MOS-FET |
Philips |
| 12533 |
BF999 |
Silicon N-Channel MOSFET Triode |
Infineon |
| 12534 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
| 12535 |
BFC40 |
N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
SemeLAB |
| 12536 |
BFC60 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
SemeLAB |
| 12537 |
BFL4001 |
N-Channel Power MOSFET, 900V, 6.5A, 2.7Ohm, TO-220F-3FS |
ON Semiconductor |
| 12538 |
BFL4004 |
N-Channel Power MOSFET, 800V, 6.5A, 2.5Ohm, TO-220F-3FS |
ON Semiconductor |
| 12539 |
BFL4026 |
N-Channel Power MOSFET, 900V, 5A, 3.6Ohm, TO-220F-3FS |
ON Semiconductor |
| 12540 |
BFL4036 |
N-Channel Power MOSFET 500 V, 14A, 520 mOhm TO-220F-3FS |
ON Semiconductor |
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