| No. |
Part Name |
Description |
Manufacturer |
| 12511 |
LVE21050R |
NPN microwave power transistor |
Philips |
| 12512 |
LWE2010S |
NPN microwave power transistor |
Philips |
| 12513 |
LWE2015R |
NPN microwave power transistor |
Philips |
| 12514 |
LX1214E500X |
NPN microwave power transistor |
Philips |
| 12515 |
LXE15450X |
NPN microwave power transistor |
Philips |
| 12516 |
LXE16350X |
NPN microwave power transistor |
Philips |
| 12517 |
LXE18300 |
NPN microwave power transistor |
Philips |
| 12518 |
LXE18300X |
NPN microwave power transistor |
Philips |
| 12519 |
LXE18400X |
NPN microwave power transistor |
Philips |
| 12520 |
LZ1418E100R |
NPN microwave power transistor |
Philips |
| 12521 |
M306N0FGTFP |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Tyco Electronics |
| 12522 |
M306N0MCT |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Tyco Electronics |
| 12523 |
M32000D4AFP |
CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Tyco Electronics |
| 12524 |
MAX2601 |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
| 12525 |
MAX2601-MAX2602 |
3.6V / 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
| 12526 |
MAX2601ESA |
3.6V / 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
| 12527 |
MAX2601ESA+ |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
| 12528 |
MAX2601ESA+T |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
| 12529 |
MAX2602 |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
| 12530 |
MAX2602E/D |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
| 12531 |
MAX2602ESA |
3.6V / 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
| 12532 |
MAX2602ESA+ |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
| 12533 |
MAX2602ESA+T |
3.6V, 1W RF Power Transistors for 900MHz Applications |
MAXIM - Dallas Semiconductor |
| 12534 |
MAX3271 |
+3.3V, 2.5Gbps Low-Power Transimpedance Amplifier |
MAXIM - Dallas Semiconductor |
| 12535 |
MAX3271D |
+3.3V, 2.5Gbps Low-Power Transimpedance Amplifier |
MAXIM - Dallas Semiconductor |
| 12536 |
MAX3271E |
+3.3V, 2.5Gbps Low-Power Transimpedance Amplifier |
MAXIM - Dallas Semiconductor |
| 12537 |
MAX3271W |
+3.3V, 2.5Gbps Low-Power Transimpedance Amplifier |
MAXIM - Dallas Semiconductor |
| 12538 |
MAX3797 |
10.3Gbps, Low-Power Transimpedance Amplifier for 10GBASE-SR Applications |
MAXIM - Dallas Semiconductor |
| 12539 |
MAX3797E/D+ |
10.3Gbps, Low-Power Transimpedance Amplifier for 10GBASE-SR Applications |
MAXIM - Dallas Semiconductor |
| 12540 |
MAX3970 |
10Gbps, 3.3V Low-Power Transimpedance Amplifier with RSSI |
MAXIM - Dallas Semiconductor |
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