No. |
Part Name |
Description |
Manufacturer |
1261 |
STL17N65M5 |
N-channel 650 V, 0.338 Ohm typ., 10 A MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package |
ST Microelectronics |
1262 |
STL35N6F3 |
N-channel 60 V, 0.019 Ohm, 10 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 package |
ST Microelectronics |
1263 |
STL40C30H3LL |
N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package |
ST Microelectronics |
1264 |
STL40N10F7 |
N-channel 100 V, 0.02 Ohm typ., 10 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in PowerFLAT(TM) 5x6 package |
ST Microelectronics |
1265 |
STL40N75LF3 |
N-channel 75 V, 16 mOhm typ., 10 A STripFET(TM) III Power MOSFET in PowerFLAT(TM) 5x6 package |
ST Microelectronics |
1266 |
STL42P4LLF6 |
P-channel 40 V, 0.016 Ohm typ., 10 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
1267 |
STP10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
1268 |
STP10NM60N |
N-channel 600 V, 0.53 Ohm, 10 A, TO-220 MDmesh(TM) II Power MOSFET |
ST Microelectronics |
1269 |
STP10P6F6 |
P-channel 60 V, 0.13 Ohm typ., 10 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
1270 |
STP11N52K3 |
N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
1271 |
STP11NM60N |
N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in TO-220 package |
ST Microelectronics |
1272 |
STP13N95K3 |
N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 |
ST Microelectronics |
1273 |
STS10DN3LH5 |
Dual N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET (TM); V Power MOSFET |
ST Microelectronics |
1274 |
STS10N3LH5 |
N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET(TM); V Power MOSFET |
ST Microelectronics |
1275 |
STS8DN3LLH5 |
Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 package |
ST Microelectronics |
1276 |
STU10NM60N |
N-channel 600 V, 0.53 Ohm, 10 A, IPAK MDmesh(TM) II Power MOSFET |
ST Microelectronics |
1277 |
STU10P6F6 |
P-channel 60 V, 0.13 Ohm typ., 10 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in IPAK package |
ST Microelectronics |
1278 |
STW13N95K3 |
N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-247 |
ST Microelectronics |
1279 |
TIP140 |
60 V, 10 A, 125 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
1280 |
TIP140T |
60 V, 10 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
1281 |
TIP141 |
80 V, 10 A, 125 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
1282 |
TIP141T |
60 V, 10 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
1283 |
TIP142 |
100 V, 10 A, 125 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
1284 |
TIP142T |
60 V, 10 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
1285 |
TIP145 |
60 V, 10 A, PNP silicon power darlington |
TRANSYS Electronics Limited |
1286 |
TIP146 |
80 V, 10 A, PNP silicon power darlington |
TRANSYS Electronics Limited |
1287 |
TIP147 |
100 V, 10 A, PNP silicon power darlington |
TRANSYS Electronics Limited |
1288 |
TIP150 |
300 V, 10 A, 80 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
1289 |
TIP150 |
300 V, 10 A, NPN silicon power darlington |
TRANSYS Electronics Limited |
1290 |
TIP151 |
350 V, 10 A, 80 W, NPN darlington-connected silicon power transistor |
Texas Instruments |
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