| No. |
Part Name |
Description |
Manufacturer |
| 1261 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 1262 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1263 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 1264 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 1265 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 1266 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 1267 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 1268 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 1269 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 1270 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 1271 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 1272 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 1273 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 1274 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 1275 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 1276 |
BGA622L7 |
Infineon Technologies Introduces Fully Integrated SiGe LNA for GPS, WLAN, UMTS and further Mobile Applications |
Infineon |
| 1277 |
BH25FB1WG |
SILICON MONOLITHIC INTEGRATED CIRCUIT |
etc |
| 1278 |
BH28FB1WHFV |
SILICON MONOLITHIC INTEGRATED CIRCUIT |
ROHM |
| 1279 |
BLD6G21L-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 1280 |
BLD6G21LS-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 1281 |
BLD6G22L-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 1282 |
BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 1283 |
BP3595 |
Compact Wireless LAN Module with Integrated Antenna |
ROHM |
| 1284 |
BP359B |
Compliant Wireless LAN Module with Integrated Antenna |
ROHM |
| 1285 |
BPX34 |
Silicon P/N photo elements line containing 50 integrated elements for readout array with fine scanning |
AEG-TELEFUNKEN |
| 1286 |
BQ2085 |
SBS Compliant Gas Gauge With Integrated Oscillator For Use With The bq29311 |
Texas Instruments |
| 1287 |
BQ2085DBT |
SBS 1.1 Compliant Gas Gauge With Integrated Oscillator For Use With The bq29311 |
Texas Instruments |
| 1288 |
BQ2085DBT-V1P2 |
SBS 1.1 Compliant Gas Gauge With Integrated Oscillator For Use With The bq29311 |
Texas Instruments |
| 1289 |
BQ2085DBT-V1P3 |
SBS 1.1 Compliant Gas Gauge With Integrated Oscillator For Use With The bq29311 |
Texas Instruments |
| 1290 |
BQ2085DBTR |
SBS 1.1 Compliant Gas Gauge With Integrated Oscillator For Use With The bq29311 |
Texas Instruments |
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