| No. |
Part Name |
Description |
Manufacturer |
| 1261 |
2N4402 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 1262 |
2N4403 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 1263 |
2N5400 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 1264 |
2N5401 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
| 1265 |
2N5550 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 1266 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 1267 |
2N6027 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
| 1268 |
2N6027 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
| 1269 |
2N6028 |
Silicon Programmable Unijunction Transistor 40V 300mW |
Motorola |
| 1270 |
2N6028 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
| 1271 |
2N6116 |
Silicon programmable unijuction transistor. |
Motorola |
| 1272 |
2N6116 |
PNPN Silicon Programmabe Unijunction Transistor |
Texas Instruments |
| 1273 |
2N6117 |
Silicon programmable unijuction transistor. |
Motorola |
| 1274 |
2N6117 |
PNPN Silicon Programmabe Unijunction Transistor |
Texas Instruments |
| 1275 |
2N6118 |
Silicon programmable unijuction transistor. |
Motorola |
| 1276 |
2N6118 |
PNPN Silicon Programmabe Unijunction Transistor |
Texas Instruments |
| 1277 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1278 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1279 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1280 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1281 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1282 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 1283 |
2N7002KA |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
| 1284 |
2N7002KU |
N Channel MOSFET ESD Protected 2000V |
Korea Electronics (KEC) |
| 1285 |
2SA1012 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1286 |
2SA1013 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS |
TOSHIBA |
| 1287 |
2SA1015 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 1288 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 1289 |
2SA1020 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS, POWER SWITCHING APPLICATIONS. |
TOSHIBA |
| 1290 |
2SA1048 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
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