| No. |
Part Name |
Description |
Manufacturer |
| 1261 |
MZT3309 |
50 watt zener transient suppressor. Nom zener voltage 10 V. |
Motorola |
| 1262 |
MZT3342 |
50 watt zener transient suppressor. Nom zener voltage 110 V. |
Motorola |
| 1263 |
NCP4625 |
300 mA, 10 V input, Low Dropout Linear Voltage Regulator |
ON Semiconductor |
| 1264 |
NGB15N41CLT4 |
Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max) |
ON Semiconductor |
| 1265 |
NGD15N41CL |
Ignition IGBT 15 Amps, 410 Volts |
ON Semiconductor |
| 1266 |
NGD15N41CL-D |
Ignition IGBT 15 Amps, 410 Volts N-Channel DPAK, D2PAK and TO-220 |
ON Semiconductor |
| 1267 |
NGD15N41CLT4 |
Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max) |
ON Semiconductor |
| 1268 |
NGP15N41CL |
Ignition IGBT 15 Amps, 410 Volts |
ON Semiconductor |
| 1269 |
NL6EBX-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
| 1270 |
NL6EBX-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. Single side stable. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 1271 |
NL6EBX-L2-DC110V |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-clad silver. |
Matsushita Electric Works(Nais) |
| 1272 |
NL6EBX-L2-DC110V-1 |
NL-relay. 6PDT, 2 Amp, dil. relay. 6 form C. Coil voltage 110 V DC. Amber sealed type. 2 coil latching. Contact material: gold-cap over silver palladium. |
Matsushita Electric Works(Nais) |
| 1273 |
P4KE100C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 90.0 V, Vbr(max) = 110 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1274 |
P4KE110 |
110 V, 1 mA, 400 W, transient voltage suppressor |
Leshan Radio Company |
| 1275 |
P4KE110 |
110 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 1276 |
P4KE110A |
110 V, 1 mA, 400 W, transient voltage suppressor |
Leshan Radio Company |
| 1277 |
P4KE110A |
110 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 1278 |
P4KE110A |
110 V, 1 mA, glass passivated junction transient voltage suppressor |
TRSYS |
| 1279 |
P4KE110C |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1280 |
P4KE110C |
110 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 1281 |
P4KE110C |
110 V, 1 mA, glass passivated junction transient voltage suppressor |
TRSYS |
| 1282 |
P4KE110CA |
400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 110 V. Bidirectional. |
Jinan Gude Electronic Device |
| 1283 |
P4KE110CA |
110 V, 400 W, glass passivated junction transient voltage suppressor |
TRANSYS Electronics Limited |
| 1284 |
P4KE110CA |
110 V, 1 mA, glass passivated junction transient voltage suppressor |
TRSYS |
| 1285 |
P4KE200CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 1286 |
P4SMAJ110 |
110 V, 400 W, surface mount transient voltage suppressor |
TRANSYS Electronics Limited |
| 1287 |
P4SMAJ110A |
110 V, 400 W, surface mount transient voltage suppressor |
TRANSYS Electronics Limited |
| 1288 |
P4SMAJ110C |
110 V, 400 W, surface mount transient voltage suppressor |
TRANSYS Electronics Limited |
| 1289 |
P4SMAJ110CA |
110 V, 400 W, surface mount transient voltage suppressor |
TRANSYS Electronics Limited |
| 1290 |
P6KE100C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 90.0 V, Vbr(max) = 110 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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