No. |
Part Name |
Description |
Manufacturer |
1261 |
BDW12A |
15A NPN silicon power transistor 180W 120V |
Motorola |
1262 |
BDW32 |
NPN silicon power transistor 30A 250W 120V |
Motorola |
1263 |
BDY53 |
Trans GP BJT NPN 120V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1264 |
BDY54 |
Trans GP BJT NPN 120V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1265 |
BDY56 |
Trans GP BJT NPN 120V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1266 |
BDY72 |
Trans GP BJT NPN 120V 3A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
1267 |
BDY74 |
Trans GP BJT NPN 120V 10A |
New Jersey Semiconductor |
1268 |
BF179B |
Si-PLANAR-npn TRANSISTOR Vcbo=220V |
IPRS Baneasa |
1269 |
BF182 |
0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 10 hFE. |
Continental Device India Limited |
1270 |
BF200 |
0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 15 - 40 hFE. |
Continental Device India Limited |
1271 |
BF494 |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 67 - 220 hFE |
Continental Device India Limited |
1272 |
BF494A |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 200 - 500 hFE |
Continental Device India Limited |
1273 |
BF494B |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 100 - 220 hFE |
Continental Device India Limited |
1274 |
BF495 |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 125 hFE |
Continental Device India Limited |
1275 |
BF495C |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 65 - 135 hFE |
Continental Device India Limited |
1276 |
BF495D |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 76 hFE |
Continental Device India Limited |
1277 |
BF959 |
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.100A Ic, 35 - hFE |
Continental Device India Limited |
1278 |
BF961 |
Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50 |
New Jersey Semiconductor |
1279 |
BF982 |
V(ds): 20V; I(d): 40mA; 225mW; silicon N-channel dual gate MOS-FET |
Philips |
1280 |
BFS22A |
Trans GP BJT NPN 20V 0.025A 3-Pin TO-236AB |
New Jersey Semiconductor |
1281 |
BFS23A |
Trans GP BJT NPN 20V 0.025A 3-Pin TO-236AB |
New Jersey Semiconductor |
1282 |
BLX13C |
Trans GP BJT NPN 120V 2A |
New Jersey Semiconductor |
1283 |
BS20106Q |
Schottky diode Quads 20V 0.6V |
IPRS Baneasa |
1284 |
BS20107Y |
Schottky diode 20V |
IPRS Baneasa |
1285 |
BSA223SP |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SC-75, Ron = 1.2 |
Infineon |
1286 |
BSD223P |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363 |
Infineon |
1287 |
BSL207SP |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, TSOP-6 |
Infineon |
1288 |
BSL211SP |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, TSOP-6 |
Infineon |
1289 |
BSO201SP |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SO-8 |
Infineon |
1290 |
BSO203P |
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SO-8 |
Infineon |
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