No. |
Part Name |
Description |
Manufacturer |
1261 |
NGTB30N120IHL |
IGBT 1200V 30A FS1 Induction Heating |
ON Semiconductor |
1262 |
NGTB30N120IHR |
IGBT with Monolithic Free Wheeling Diode |
ON Semiconductor |
1263 |
NGTB30N120IHSW |
IGBT 1200V 30A FS1 Induction Heating |
ON Semiconductor |
1264 |
NGTB30N120L |
IGBT 1200V 30A FS1 Gen Mkt |
ON Semiconductor |
1265 |
NGTB30N120L2W |
IGBT - Field Stop II |
ON Semiconductor |
1266 |
NGTB30N135IHR |
IGBT 1350V 30A FS2-RC Induction Heating |
ON Semiconductor |
1267 |
NGTB30N60FLW |
IGBT 600V 30A FS1 Solar/UPS |
ON Semiconductor |
1268 |
NGTB30N60FW |
IGBT 600V 30A Gen Mkt |
ON Semiconductor |
1269 |
NGTB30N60IHLW |
IGBT 600V 30A FS1 Induction Heating |
ON Semiconductor |
1270 |
NSPB300A |
SPECIFICATIONS FOR NICHIA BLUE LED |
NICHIA CORPORATION |
1271 |
NTB30N06L |
Power MOSFET 30 Amps, 60 Volts, Logic Level |
ON Semiconductor |
1272 |
NTB30N06LG |
Power MOSFET 30 Amps, 60 Volts, Logic Level |
ON Semiconductor |
1273 |
NTB30N06LT4 |
Power MOSFET 30 Amps, 60 Volts, Logic Level |
ON Semiconductor |
1274 |
NTB30N06LT4G |
Power MOSFET 30 Amps, 60 Volts, Logic Level |
ON Semiconductor |
1275 |
NTB30N20 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
1276 |
NTB30N20-D |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
1277 |
NTB30N20T4 |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
1278 |
NTB30N20T4G |
Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode D2PAK |
ON Semiconductor |
1279 |
NX8562LB303-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. Anode ground. FC-PC connector. |
NEC |
1280 |
NX8563LB303-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1530.33 nm. Frequency 195.90 THz. FC-PC connector. Anode ground. |
NEC |
1281 |
P6SMB30 |
TVS: Unidirectional |
Taiwan Semiconductor |
1282 |
P6SMB30A |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
1283 |
P6SMB30A |
High Power Transient Suppressor |
ON Semiconductor |
1284 |
P6SMB30A |
TVS: Unidirectional |
Taiwan Semiconductor |
1285 |
P6SMB30AT3 |
High Power Transient Suppressor |
ON Semiconductor |
1286 |
P6SMB30C |
TVS: Bidirectional |
Taiwan Semiconductor |
1287 |
P6SMB30CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
1288 |
P6SMB30CA |
High Power Bidirectional |
ON Semiconductor |
1289 |
P6SMB30CA |
TVS: Bidirectional |
Taiwan Semiconductor |
1290 |
P6SMB30CAT3 |
High Power Bidirectional |
ON Semiconductor |
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