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Datasheets for D FOR

Datasheets found :: 3637
Page: | 39 | 40 | 41 | 42 | 43 | 44 | 45 | 46 | 47 |
No. Part Name Description Manufacturer
1261 BQ76925RGET Analog Front End for 3 to 6 Series Lithium-Ion Cells 24-VQFN -25 to 85 Texas Instruments
1262 BSV15 Silicon PNP epitaxial planar transistor for medium AF power amplifiers and and for switching applications AEG-TELEFUNKEN
1263 BSV16 Silicon PNP epitaxial planar transistor for medium power AF amplifiers and for AF switching applications AEG-TELEFUNKEN
1264 BSV51 Silicon NPN epitaxial planar transistor with high reverse collector base voltage, especially for indicator tube driver stages and for relaise driver stages AEG-TELEFUNKEN
1265 BSW11 Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits AEG-TELEFUNKEN
1266 BSW12 Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 AEG-TELEFUNKEN
1267 BSX45 Silicon NPN epitaxial planar transistor for medium AF power amplifiers and for AF switching applications AEG-TELEFUNKEN
1268 BSX46 Silicon NPN epitaxial planar transistor for medium power AF amplifiers and for AF switching applications AEG-TELEFUNKEN
1269 BU126 Silicon NPN triple diffused MESA high voltage power transistor intended for use in the switched mode power supply of television receivers TOSHIBA
1270 BU205 NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W. USHA India LTD
1271 BU208 NPN silicon power high-voltage transistor designed for use in colour televisions Motorola
1272 BU208A NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. USHA India LTD
1273 BU208D 5A NPN silicon power transistor 1500V 60V designed for TV horizontal deflection, with integrated damper diode Motorola
1274 BU209 NPN silicon power high-voltage transistor designed for use in colour televisions Motorola
1275 BU209A NPN silicon power high-voltage transistor designed for use in colour televisions Motorola
1276 BU326S Silicon multiepitaxial biplanar® NPN high voltage power transistor intended for switch-mode CTV applications SGS-ATES
1277 BU508A NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. USHA India LTD
1278 BU508D NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. USHA India LTD
1279 BU7150NUV Headphone Amplifier Designed for 0.93V Low Voltage Operation ROHM
1280 BU7150NUV-E2 Headphone Amplifier Designed for 0.93V Low Voltage Operation ROHM
1281 BUV11N NPN Silicon power metal transistor 20A, designed for high speed, high current, high power applications Motorola
1282 BX DIELECTRIC Monolithic Ceramic Chip Capacitors, Designed for Excellent Temperature Voltage Coefficient, Excellent Aging Characteristics Vishay
1283 BY176 Silicon E.H.T. Rectifier Diode intended for tripler voltage circuits Philips
1284 BY185 Silicon E.H.T. Rectifier Diode, intended for use in horizontal deflection Philips
1285 BY187 Silicon E.H.T. Rectifier Diode, intended for tripler circuits Philips
1286 BYX13-1000 Silicon Rectifier Diode, intended for power rectifier applications, normal polarity Philips
1287 BYX13-1000R Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity Philips
1288 BYX13-1200 Silicon Rectifier Diode, intended for power rectifier applications, normal polarity Philips
1289 BYX13-1200R Silicon Rectifier Diode, intended for power rectifier applications, reverse polarity Philips
1290 BYX13-800 Silicon Rectifier Diode, intended for power rectifier applications, normal polarity Philips


Datasheets found :: 3637
Page: | 39 | 40 | 41 | 42 | 43 | 44 | 45 | 46 | 47 |



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