No. |
Part Name |
Description |
Manufacturer |
1261 |
MRA164 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1262 |
MRA330 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1263 |
MRA331 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1264 |
MRA332 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1265 |
MRA333 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1266 |
MRA334 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1267 |
MRA360 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1268 |
MRA361 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1269 |
MRA362 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1270 |
MRA363 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1271 |
MRA364 |
Multi-Cell II, power rectifier diode circuits designed for high-current rectifier service |
Motorola |
1272 |
MRD250 |
NPN silicon photo detector designed for application in card and tape readers, pattern and character recognition and shaft encoders |
Motorola |
1273 |
MRD300 |
NPN silicon high sensitivity photo transistor designed for application in industrial inspection, processing and control, counters, sorters |
Motorola |
1274 |
MRF216 |
40W - 175MHz Controlled RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
1275 |
MRF225 |
1.5W - 225 MHz RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
1276 |
MRF402 |
NPN silicon RF power transistor 1.0W, 50MHz, designed for 12.5V |
Motorola |
1277 |
MRF619 |
25W - 470 MHz - Controlled Q RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
1278 |
MRF620 |
35W - 470 MHz - Controlled Q RF Power Transistor NPN Silicon designed for 12.5V |
Motorola |
1279 |
MRF817 |
2.5W - 900MHz RF Power Transistor NPN Silicon designed for 13.6V |
Motorola |
1280 |
MSC1002M |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
1281 |
MSC1002MP |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
1282 |
MSC4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
1283 |
MSC4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
1284 |
MSC80264 |
NPN power RF transistor designed for Class C linear applications 1-4GHz |
SGS Thomson Microelectronics |
1285 |
MSC81150M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
1286 |
MSC81175M |
High Power pulsed transistor designed for DME/TACAN avionics applications |
SGS Thomson Microelectronics |
1287 |
MSC81300M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
1288 |
MSC81390M |
Transistor designed for IFF avionics applicatios |
SGS Thomson Microelectronics |
1289 |
MSC81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
1290 |
MSC81410 |
28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band |
SGS Thomson Microelectronics |
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