| No. |
Part Name |
Description |
Manufacturer |
| 1261 |
2N3300 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 1262 |
2N3300 |
NPN silicon annular transistor |
Motorola |
| 1263 |
2N3301 |
NPN silicon annular transistor |
Motorola |
| 1264 |
2N3302 |
NPN silicon annular transistor |
Motorola |
| 1265 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 1266 |
2N3303 |
Silicon n-p-n medium power transistor |
Mullard |
| 1267 |
2N3304 |
PNP silicon annular transistor |
Motorola |
| 1268 |
2N3311 |
PNP germanium power transistor |
Motorola |
| 1269 |
2N3312 |
PNP germanium power transistor |
Motorola |
| 1270 |
2N3313 |
PNP germanium power transistor |
Motorola |
| 1271 |
2N3314 |
PNP germanium power transistor |
Motorola |
| 1272 |
2N3315 |
PNP germanium power transistor |
Motorola |
| 1273 |
2N3316 |
PNP germanium power transistor |
Motorola |
| 1274 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 1275 |
2N3375 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
| 1276 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 1277 |
2N3375 |
R.F. power transistor |
Mullard |
| 1278 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
| 1279 |
2N3391 |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
| 1280 |
2N3397A |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
| 1281 |
2N3402 |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
| 1282 |
2N3403 |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
| 1283 |
2N3404 |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
| 1284 |
2N3405 |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
| 1285 |
2N340A |
General Purpose Bipolar Transistor |
New Jersey Semiconductor |
| 1286 |
2N3418 |
Planar transistor for switching applications |
SGS-ATES |
| 1287 |
2N3419 |
Planar transistor for switching applications |
SGS-ATES |
| 1288 |
2N3420 |
Planar transistor for switching applications |
SGS-ATES |
| 1289 |
2N3421 |
Planar transistor for switching applications |
SGS-ATES |
| 1290 |
2N3426 |
Silicon n-p-n medium power transistor |
Mullard |
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