No. |
Part Name |
Description |
Manufacturer |
12631 |
S3020A |
GaAs epitaxial MESA GUNN diode |
TOSHIBA |
12632 |
S3023 |
Silicon epitaxial planar PIN diode |
TOSHIBA |
12633 |
S3028 |
Silicon epitaxial planar varactor diode |
TOSHIBA |
12634 |
S3041 |
GaAs Epitaxial planar varactor diode |
TOSHIBA |
12635 |
S3041A |
GaAs Epitaxial planar varactor diode |
TOSHIBA |
12636 |
S3046 |
Silicon epitaxial planar step recovery diode |
TOSHIBA |
12637 |
S3053 |
Silicon epitaxial MESA step recovery diode |
TOSHIBA |
12638 |
S3275 |
Silicon Epitaxial Schottky barrier type diode |
TOSHIBA |
12639 |
S8201 |
GaAs epitaxial MESA GUNN diode |
TOSHIBA |
12640 |
S8202 |
GaAs epitaxial MESA GUNN diode |
TOSHIBA |
12641 |
S8250 |
Silicon epitaxial MESA impatt diode |
TOSHIBA |
12642 |
S8250A |
Silicon epitaxial MESA impatt diode |
TOSHIBA |
12643 |
S8250B |
Silicon epitaxial MESA impatt diode |
TOSHIBA |
12644 |
SAH02 |
Silicon PNP Epitaxial Planar Transistor with Shottky Barrier Diode(Chopper Regulator) |
Sanken |
12645 |
SAH03 |
Silicon PNP Epitaxial Planar Transistor with Fast-Recovery Rectifier Diode(Voltage change switch for motor) |
Sanken |
12646 |
SB30-03P |
Sillicon Epitaxial Schottky Barrier Diode 30V, 3A Rectifier |
SANYO |
12647 |
SC116 |
Si-pnp Epitaxial Planar transistor |
RFT |
12648 |
SC117 |
Si-pnp Epitaxial Planar transistor |
RFT |
12649 |
SC118 |
Si-pnp Epitaxial Planar transistor |
RFT |
12650 |
SC119 |
Si-pnp Epitaxial Planar transistor |
RFT |
12651 |
SC1968 |
NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
12652 |
SC2999 |
NPN Epitaxial Planar Silicon Transistor(HF Amp Applications) |
SANYO |
12653 |
SC3279 |
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
12654 |
SC5262 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
12655 |
SD1014-06 |
Epitaxial silicon Class C NPN planar transistor for VHF mobile and marine transmitters |
SGS Thomson Microelectronics |
12656 |
SD1070 |
Silicon epitaxial NPN planar high-frequency transistor employs a multi emitter electrode design 28V 13.5W |
SGS Thomson Microelectronics |
12657 |
SD1143-01 |
12.5V Class C 10W epitaxial silicon NPN planar transistor designed primarly for VHF communications |
SGS Thomson Microelectronics |
12658 |
SD1224-02 |
Epitaxial silicon NPN planar RF transistor 40W |
SGS Thomson Microelectronics |
12659 |
SD1240 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
12660 |
SD1242 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| | | |