| No. |
Part Name |
Description |
Manufacturer |
| 12661 |
IRF5YZ48CM |
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package |
International Rectifier |
| 12662 |
IRF610 |
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 12663 |
IRF610 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 12664 |
IRF610 |
3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 12665 |
IRF610 |
Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 12666 |
IRF610 |
N-Channel Power MOSFET |
Samsung Electronic |
| 12667 |
IRF610-613 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 12668 |
IRF6100 |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| 12669 |
IRF6100PBF |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| 12670 |
IRF6100TR |
-20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package |
International Rectifier |
| 12671 |
IRF610B |
200V N-Channel MOSFET |
Fairchild Semiconductor |
| 12672 |
IRF610PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 12673 |
IRF610R |
Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 12674 |
IRF610S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12675 |
IRF610S |
Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 12676 |
IRF610STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12677 |
IRF610STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12678 |
IRF611 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 12679 |
IRF611 |
Trans MOSFET N-CH 150V 2.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 12680 |
IRF611 |
N-Channel Power MOSFET |
Samsung Electronic |
| 12681 |
IRF612 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 12682 |
IRF612 |
Trans MOSFET N-CH 200V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 12683 |
IRF612 |
N-Channel Power MOSFET |
Samsung Electronic |
| 12684 |
IRF613 |
N-Channel Power MOSFETs/ 3.5A/ 150-200V |
Fairchild Semiconductor |
| 12685 |
IRF613 |
Trans MOSFET N-CH 150V 2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 12686 |
IRF613 |
N-Channel Power MOSFET |
Samsung Electronic |
| 12687 |
IRF614 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 12688 |
IRF614 |
2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET |
Intersil |
| 12689 |
IRF614B |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 12690 |
IRF614PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
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