| No. |
Part Name |
Description |
Manufacturer |
| 12661 |
IRF1104STRR |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12662 |
IRF120 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 12663 |
IRF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. |
General Electric Solid State |
| 12664 |
IRF120 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 12665 |
IRF120 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA |
New Jersey Semiconductor |
| 12666 |
IRF120 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12667 |
IRF120-123 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 12668 |
IRF121 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 12669 |
IRF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. |
General Electric Solid State |
| 12670 |
IRF121 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 12671 |
IRF121 |
Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12672 |
IRF121 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12673 |
IRF122 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 12674 |
IRF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. |
General Electric Solid State |
| 12675 |
IRF122 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 12676 |
IRF122 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12677 |
IRF122 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12678 |
IRF123 |
N-Channel Power MOSFETs/ 11 A/ 60-100 V |
Fairchild Semiconductor |
| 12679 |
IRF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. |
General Electric Solid State |
| 12680 |
IRF123 |
8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs |
Intersil |
| 12681 |
IRF123 |
Trans MOSFET N-CH 80V 8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12682 |
IRF123 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12683 |
IRF130 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
| 12684 |
IRF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. |
General Electric Solid State |
| 12685 |
IRF130 |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 12686 |
IRF130 |
14A/ 100V/ 0.160 Ohm/ N-Channel Power MOSFET |
Intersil |
| 12687 |
IRF130 |
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12688 |
IRF130 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12689 |
IRF130 |
N-CHANNEL POWER MOSFET |
SemeLAB |
| 12690 |
IRF130 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
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