| No. |
Part Name |
Description |
Manufacturer |
| 12721 |
GT20D101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS |
TOSHIBA |
| 12722 |
GT20D201 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON P CHANNEL IGBT HIGH POWER SWITCHING APPLICATION |
TOSHIBA |
| 12723 |
GT20J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 12724 |
GT20J301 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 12725 |
GT20J311 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
TOSHIBA |
| 12726 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 12727 |
GT250 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 12728 |
GT250/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 12729 |
GT250/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 12730 |
GT250/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 12731 |
GT250/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
| 12732 |
GT250/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
| 12733 |
GT250/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
| 12734 |
GT250/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
| 12735 |
GT250/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
| 12736 |
GT25J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 12737 |
GT25J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 12738 |
GT25Q101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 12739 |
GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 12740 |
GT25Q301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 12741 |
GT30J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications |
TOSHIBA |
| 12742 |
GT30J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 12743 |
GT30J301 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 12744 |
GT30J311 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 12745 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
| 12746 |
GT400 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 12747 |
GT400/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 12748 |
GT400/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 12749 |
GT400/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 12750 |
GT400/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
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