| No. |
Part Name |
Description |
Manufacturer |
| 12721 |
NDD03N80Z |
Power MOSFET 800V 4.5 Ohm Single N-Channel |
ON Semiconductor |
| 12722 |
NDD04N50Z |
Power MOSFET 500V 2.7 Ohm Single N-Channel |
ON Semiconductor |
| 12723 |
NDF02N60Z |
Power MOSFET 600V 4.8 Ohm Single N-Channel |
ON Semiconductor |
| 12724 |
NDF03N60Z |
Power MOSFET 600V 3.6 Ohm Single N-Channel |
ON Semiconductor |
| 12725 |
NDF04N62Z |
Power MOSFET 620V 2 Ohm Single N-Channel |
ON Semiconductor |
| 12726 |
NDF05N50Z |
Power MOSFET 500V 1.5 Ohm Single N-Channel |
ON Semiconductor |
| 12727 |
NDF06N62Z |
Power MOSFET 620V 1.2 Ohm Single N-Channel |
ON Semiconductor |
| 12728 |
NDF08N50Z |
Power MOSFET 500V 0.850 Ohm Single N-Channel |
ON Semiconductor |
| 12729 |
NDF08N60Z |
Power MOSFET 600V 0.95 Ohm Single N-Channel |
ON Semiconductor |
| 12730 |
NDF10N62Z |
Power MOSFET 620V 0.750 Ohm Single N-Channel |
ON Semiconductor |
| 12731 |
NDF11N50Z |
Power MOSFET 500V 0.52 Ohm Single N-Channel |
ON Semiconductor |
| 12732 |
NDP605A |
Trans MOSFET N-CH 50V 48A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 12733 |
NDP605AL |
Trans MOSFET N-CH 50V 48A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 12734 |
NDP606B |
Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 12735 |
NDS8839H |
Complementary MOSFET Half Bridge [Life-time buy] |
Fairchild Semiconductor |
| 12736 |
NDS8839H |
Complementary MOSFET Half Bridge |
National Semiconductor |
| 12737 |
NDS8852H |
Complementary MOSFET Half Bridge [Life-time buy] |
Fairchild Semiconductor |
| 12738 |
NDS8852H |
Complementary MOSFET Half Bridge |
National Semiconductor |
| 12739 |
NDS8858H |
Complementary MOSFET Half Bridge |
Fairchild Semiconductor |
| 12740 |
NDS8858H |
Complementary MOSFET Half Bridge |
National Semiconductor |
| 12741 |
NDS8858H_NL |
Complementary MOSFET Half Bridge |
Fairchild Semiconductor |
| 12742 |
NE5510179A-T1 |
3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. |
NEC |
| 12743 |
NE5510279A-T1 |
3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers. |
NEC |
| 12744 |
NIC9N05TS1 |
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection |
ON Semiconductor |
| 12745 |
NIC9N05TS1 |
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection |
ON Semiconductor |
| 12746 |
NID9N05CL |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 12747 |
NID9N05CL |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 12748 |
NID9N05CLT4 |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 12749 |
NID9N05CLT4 |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| 12750 |
NID9N05CLT4G |
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package |
ON Semiconductor |
| | | |
