No. |
Part Name |
Description |
Manufacturer |
12751 |
MP4502 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
12752 |
MP4503 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
12753 |
MP4504 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
12754 |
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
12755 |
MP6301 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor |
TOSHIBA |
12756 |
MP6901 |
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
12757 |
MPS-A13 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
12758 |
MPS-A14 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
12759 |
MPS-A65 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
12760 |
MPS-A66 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
12761 |
MPS2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
12762 |
MPS2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
12763 |
MPS2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
12764 |
MPS2222A |
75 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
12765 |
MPS2711 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
12766 |
MPS2711 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
12767 |
MPS2712 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
12768 |
MPS2712 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
12769 |
MPS2716 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
12770 |
MPS2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
12771 |
MPS2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
12772 |
MPS2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
12773 |
MPS2907 |
60 V, 600 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
12774 |
MPS2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
12775 |
MPS2923 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
12776 |
MPS2924 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
12777 |
MPS2925 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
12778 |
MPS2926 |
NPN silicon epitaxial transistor |
Motorola |
12779 |
MPS3390 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
12780 |
MPS3391 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
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